选用Cd0.9Zn0.1Te晶体和纯度为99.999％的铝为靶材,结合Al诱导晶化技术,采用磁控溅射法在普通玻璃衬底上制备了CdZnTe薄膜.研究了铝诱导CdZnTe薄膜的结构和形核机理.研究表明,铝诱导的CZT薄膜为闪锌矿结构,且为(111)晶面的取向生长；在薄膜生长过程中,覆盖在CdZnTe表面的铝首先与ZnTe结合,形成了ZnAl2Te4相,并以此为核心,诱导CdZnTe异质形核结晶,重新形成了小晶粒团簇的较致密颗粒状薄膜,提高了薄膜(111)面的优势取向结晶,提高了CdZnTe薄膜的结晶质量.讨论了薄膜的光学性能.
参考文献
| [1] | 韦永林 .碲锌镉探测器的制备及性能研究[D].四川大学,2005. |
| [2] | Sellin PJ .Thick film compound semiconductors for X-ray imaging applications[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2006(1):1-8. |
| [3] | James R B;Schiratio R C.Hard X-ray,gamma-ray and neutron detector physics[A].Colorado,1999 |
| [4] | N. B. Chaure;Shweta Chaure;R. K. Pandey .Cd{sub}(1-x)Zn{sub}xTe thin films formed by non-aqueous electrochemical route[J].Electrochimica Acta,2008(2):296-304. |
| [5] | 粟红玉;申德振;杨宝均 等.MOCVD生长的CdZnTe/ZnTe多量子阱的激子光学特性[J].光电子·激光,1996,7(04):202-204. |
| [6] | Sorgenfrei R;Greiffenberg D;Bachem KH;Kirste L;Zwerger A;Flederle M .Growth of thick films CdTe from the vapor phase[J].Journal of Crystal Growth,2008(7/9):2062-2066. |
| [7] | 高俊宁,袁妍妍,何亦辉,于晖,仝俊利,王涛,介万奇.控制降温对近空间升华法沉积CdZnTe薄膜形貌与结构的影响[J].功能材料,2012(06):725-728. |
| [8] | 邵烨,郑家贵,蔡道林,张静全,蔡伟,武莉莉,蔡亚平,李卫,冯良桓.Cd1-xZnxTe多晶薄膜的制备、性能与光伏应用[J].半导体学报,2003(02):183-188. |
| [9] | 曾冬梅,周海,卢一民,杨英歌.溅射功率对CdZnTe薄膜成分和结构的影响[J].功能材料,2011(09):1663-1665. |
| [10] | 张榕,周海平,陈红.碲化镉薄膜太阳能电池及其溅射制备[J].材料导报,2006(11):47-50. |
| [11] | Peng SL;Shen XY;Tang ZG;He DY .Low-temperature Al-induced crystallization of hydrogenated amorphous Si1-xGex (0.2 <= x <= 1) thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(8):2276-2279. |
| [12] | Nast O.;Koschier LM.;Sproul AB.;Wenham SR.;Puzzer T. .Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature[J].Applied physics letters,1998(22):3214-3216. |
| [13] | Al-Dhafiri A M;Naseem H A.Metal Induced Crystallization (MIC) of a-Si produced by magnetron sputtering[A].Orlando(USA),2005:1516-1519. |
| [14] | W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet;C. Lavoie .In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(15):4946-4952. |
| [15] | Seah MP .An accurate semi-empirical equation for sputtering yields, II: for neon, argon and xenon ions[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2005(3/4):348-358. |
| [16] | 陈明 .磁控溅射过程中溅射产额及靶材刻蚀的模拟计算研究[D].合肥工业大学,2007. |
| [17] | 唐伟忠.薄膜材料制备原理、技术及应用[M].北京:冶金工业出版社,2003:56. |
| [18] | 郭金玲,沈岳年,SHE Yue-nian.用Scherrer公式计算晶粒度应注意的几个问题[J].内蒙古师范大学学报（自然科学汉文版）,2009(03):357-358. |
| [19] | 杨德仁.半导体材料测试与分析[M].北京:科学出版社,2010:294-296. |
| [20] | 周 昊 .CdZnTe薄膜制备与性能表征[D].西安:西北工业大学,2010. |
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