助熔剂法生长ZnO晶体

人工晶体学报, 2008, 37(3): 551-556.

助熔剂法生长ZnO晶体

张帆 ^1, , 沈德忠 ^2, , 沈光球 ^3, , 王晓青 ^4,

1.清华大学化学系,北京,100084

2.清华大学化学系,北京,100084;人工晶体研究院,北京,100018

3.清华大学化学系,北京,100084

4.清华大学化学系,北京,100084

基金项目: 江苏省自然科学基金(50590402)

关键词：晶体生长 , 助熔剂法 , 氧化锌

Crystal Growth of ZnO by Flux Method

ZHANG Fan ^1, , SHEN De-zhong ^2, , SHEN Guang-qiu ^3, , WANG Xiao-qing ^4,

1.清华大学化学系,北京,100084

2.清华大学化学系,北京,100084;人工晶体研究院,北京,100018

3.清华大学化学系,北京,100084

4.清华大学化学系,北京,100084

Keywords： crystal growth , flux method , ZnO

采用Bi4B2O9、CdB2O4和BaB2O4为助熔剂,获得了毫米级的氧化锌单晶.Muiliken的电负性理论和Viting的平均轨道电负性提供了一个选择晶体生长所采用的助熔剂的有效方法.实验结果表明ZnO晶体的生长温度比文献报道的均低,从而有效地减少了ZnO以及助熔剂的挥发.本文给出了几种有望获得大尺寸ZnO单晶的助熔剂.

Zinc oxide single crystals with millimeter grade have been grown using Bi4B2O9, CdB2O4 and BaB2O4 as fluxes. The electronegativity theory of MuUiken and the mean orbital electronegativity of Viting provide an effective way to choose the fluxes for crystal growth. The crystal growth temperature is relative lower than that of the reported literatures, decreasing the volatilization of ZnO and the fluxes effectively.It provides new promising fluxes to grow large-sized ZnO single crystal.

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