采用金属有机化学气相沉积(MOCVD)技术,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜.X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面粗糙度小于0.5nm,其位错密度低于106 cm3.
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