通过GaN基微纳米器件中纳米尺度界面的热输运成为微系统热管理和热设计的热点和难点,而通过GaN/Al2O3之间界面热阻尚未测试.首先采用双波长TDTR方法测量了Al膜与GaN薄膜之间的界面热阻,然后借助热阻抗网络和参数敏感性分析,利用宽频3ω法对A/lGaN/Al2O3多层薄膜结构内部界面热阻进行实验重构.两种方法测量的GaN/Al2O3之间界面热阻量级相同,相互验证了测试结果的合理性.两种方法结合可实现微纳米多层结构多个热物性参数的精细描述.
Thermal transport across the nano scale boundary in GaN based micro and nano scale devices has been the hotspot and challenger in thermal management and design of micro systems.The thermal boundary resistance has not been successfully measured between GaN/Al2O3surfaces.The two-color TDTR technique is used to determine thermal boundary resistance between Al/GaN.The wide-frequency band 3ω method under the thermal impedance circuit and sensitivity analysis is used to reconstruct the thermal boundary resistances within the Al/GaN/Al2O3 multilayer film structure.The magnitude of thermal boundary resistances between GaN/Al2O3 is of the same order validating the experimental results.Fine determination of the multiple thermal parameters of multilayer micro-nano structure can be achieved by the combination of TDTR and 3ω methods.
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