在NiS纳米粒子的辅助下,采用CVD方法,在NiS-Zn系统中成功地合成了长为25μm,直径大约200nm的具有立方相闪锌矿结构ZnS纳米线,其最优生长方向为[111].由PL谱可知,在437.2nm处有一个很强的发射峰,说明ZnS纳米线具有很好的发光特性和单晶质量.并提出了氧化还原反应作用下的VLS生长机制,较好的解释了ZnS纳米线的形成过程.
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