采用溶胶-凝胶法制备了ZnO∶Al(AZO)透明导电薄膜.通过X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis)、扫描电镜(SEM)和电阻测量装置, 考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响. 结果表明,退火温度越高, 多晶AZO薄膜的(001)晶面择优取向生长的趋势越强, 并且随退火温度升高,薄膜的晶粒尺寸增大, 透光率增加. 薄膜晶体结构为纯ZnO的六角纤锌矿结构. 在掺杂浓度1%(摩尔分数)、退火温度500℃及镀膜层数10的条件下, 得到了电阻率为3.2×10-3 Ω•cm、可见光区的平均透射率超过90%的AZO薄膜.
Aluminium doped zinc oxide polycrystalline thin films (AZO) were prepared on microscope glass substrates by sol-gel dip-coating process. Zinc acetate solutions of 0.5 M in isopropanol stabilized by diethanolamine and doped with a concentrated solution of aluminium nitrate in ethanol were used. The quantity of aluminium in the sol was varied from 1 to 3 at. %, and the deposition times was varied from 5 to 15. Crystalline ZnO thin films were obtained following an annealing process at temperatures between 300℃ and 500℃ for 1 h. The coatings have been characterized by X-ray diffraction (XRD), optical spectroscopy (UV-Vis), scanning electron microscope (SEM), and electrical resistance measurement. With the annealing temperature increased from 300℃ to 500℃, the film was oriented more preferentially along the (0 0 2) direction, the grain size of the film increased, the transmittance also became higher and the electrical resistivity decreased. The X-ray diffraction analysis revealed single-phase ZnO hexagonal zincite structure. Optical transmittance over 90% in the near UV and VIS regions and electrical resistivity as low as 3.2×10-3 Ω·cm were obtained under such conditions, doping concentration 1 at. %, annealing temperature 500℃, deposition times 10.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] | |
| [7] | |
| [8] | |
| [9] | |
| [10] | |
| [11] | |
| [12] |
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