利用RF磁控溅射法制备了Pb(Zr,Ti)O3(PZT)铁电薄膜,利用X射线衍射(XRD)法研究了薄膜的相组成及溅射工艺参数对薄膜织构的影响.结果表明,在小靶基距时,过高溅射功率不利于获得纯钙钛矿相的PZT铁电薄膜.溅射功率及溅射气压影响PZT薄膜的织构及其织构散漫度,提高溅射气压及溅射功率,(111)织构漫散度随之提高.在靶基距为80mm时,选择150w、0.7Pa的溅射工艺可获得具有最佳(100)织构的PZT薄膜.
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