SO2-4是KDP原料中一种常见的杂质离子,通过传统降温法和"点籽晶"快速生长法研究了掺杂K2SO4的KDP晶体的生长.实验表明,硫酸根低浓度掺杂时可提高溶液的稳定性,促进晶体的生长,造成柱面扩展;高浓度时溶液稳定性遭到破坏,出现杂晶,晶体生长速度变慢,晶体出现开裂,柱面发生"楔化".
参考文献
[1] | Rhode M A;Woods B;de Yoreo J J et al.[J].Applied Optics,1995,34(24):5312-5325. |
[2] | Sangwal K .[J].Prog Crystal Growth and Character,1996,32:3-43. |
[3] | Rashkovich LN.;Kronsky NV. .INFLUENCE OF FE3+ AND AL3+ IONS ON THE KINETICS OF STEPS ON THE (1 0 0) FACES OF KDP[J].Journal of Crystal Growth,1997(3/4):434-441. |
[4] | Loiacono G M;Zola J J;Kostecky G .[J].Journal of Crystal Growth,1982,58:495-499. |
[5] | 高樟寿.偏磷酸盐对KDP晶体生长的影响[J].人工晶体学报,1994(z1):52. |
[6] | 孙洵;傅有君;高樟寿 等.[J].科学通报,2002,46(03):251-253. |
[7] | Kuznetsov VA.;Rak M.;Okhrimenko TM. .Growth promoting effect of organic impurities on growth kinetics of KAP and KDP crystals[J].Journal of Crystal Growth,1998(1/2):164-173. |
[8] | de Vries S A;Vling E;Goedtkindt P.Abstracts of ICCG'12[C].Israel: Jerusalem,1998:143. |
[9] | Dam B;Bennema P;van Enckevort W J P .[J].Journal of Crystal Growth,1986,74:118-128. |
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