金/硅纳米孔柱阵列的场发射

功能材料, 2009, 40(9): 1559-1562.

金/硅纳米孔柱阵列的场发射

富笑男 ^1, , 罗艳伟 ^2, , 符建华 ^3, , 李坤 ^4, , 程莉娜 ^5, , 李新建 ^6,

1.河南工业大学,理学院,河南,郑州,450001

2.河南工业大学,理学院,河南,郑州,450001

3.河南工业大学,理学院,河南,郑州,450001

4.河南工业大学,理学院,河南,郑州,450001

5.河南工业大学,理学院,河南,郑州,450001

6.郑州大学,物理系,材料物理教育部重点实验室,河南,郑州,450052

基金项目: 国家自然科学基金(10574112) 河南工业大学科研基金(07XJC010) 河南省教育厅自然科学基金(2007140003) 河南工业大学博士基金(2007BS009)

关键词：金/硅纳米孔柱阵列 , 场发射 , 浸渍技术

Field emission from Au/silicon nanoporous pillar array

利用浸溃技术在硅纳米孔柱阵列(silicon nanoporous pillar array(简称Si-NPA))上制备了复合纳米薄膜Au/Si-NPA.测试了其场发射性能.测试结果显示,Au/Si-NPA的开启电场为约2V/μm;在7.59V/μm的外加电场下,其发射电流密度为67μA/cm2;在外加电压2000V时,其电流浮动率为21%.导致Au/Si-NPA优良的发射性能是由于其独特的表面形貌和结构所致.

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金/硅纳米孔柱阵列的场发射

Field emission from Au/silicon nanoporous pillar array

参考文献