用改进的溶胶-凝胶(Sol-gel)法制备6层钇(Y)掺杂浓度分别为1％/1.1％/1.2％/1.3％/1.4％/1.5％的梯度Ba0.6Sr0.4TiO3薄膜(1-1.5YBST)和掺杂浓度分别为1％/1.3％/1.6％/1.9％/2.2％/2.5％的梯度Ba0.6Sr0.4TiO3薄膜(1-2.5YBST),研究掺杂浓度梯度对薄膜结构及介电性能的影响.X射线衍射(XRD)表明,两薄膜主要沿(110)晶面生长,为立方钙钛矿结构,比6层Y掺杂浓度均为1％的BST薄膜(YBST)的衍射峰强度及晶化减弱,但掺杂浓度梯度较大的1-2.5YBST对应的衍射强度和晶化较强.原子力显微镜(AFM)表明,1-2.5YBST具有更光滑的形貌.两薄膜比YBST具有高的电容、低的介电损耗、高的调谐率,而1-2.5YBST具有更优异的综合介电性能:零偏压下的电容为17.45 pF(介电常数127)、介电损耗为0.82％及最大调谐率为34.6％、优质因子为42.
参考文献
| [1] | Low dielectric loss and enhanced tunability of Ba_(0.6)Sr_(0.4)TiO_(3) based thin films via material compositional design and optimized film processing methods[J].Journal of Applied Physics,2003(11):9218-9225. |
| [2] | M. W. Cole;C. Hubbard;E. Ngo;M. Ervin;M. Wood;R. G. Geyer .Structure-property relationships in pure and acceptor-doped Ba_(1-x)Sr_(x)TiO_(3) thin films for tunable microwave device applications[J].Journal of Applied Physics,2002(1):475-483. |
| [3] | HU-YONG TIAN;WEI-GEN LUO;AI-LI DING .THE INFLUENCE OF Y-DOPANT ON THE PROPERTIES OF BST FILMS DERIVED FROM A SOL-GEL PROCESS[J].Ferroelectrics: Letters Section,2001(1/4):169-174. |
| [4] | Improvement in electrical characteristics of graded manganese doped barium strontium titanate thin films[J].Applied physics letters,2003(12):1911-1913. |
| [5] | L. N. GAO;S. N. SONG;J. W. ZHAI .Improvement of Dielectric Properties of Graded Co-Doped (Ba_(0.7)Sr_(0.3))TiO_3 Thin Films Fabricated by Sol-Gel Method[J].Ferroelectrics: Letters Section,2007(1):142-147. |
| [6] | S. Saha;S. B. Krupanidhi .Large reduction of leakage current by graded-layer La doping in (Ba_(0.5), Sr_(0.5))TiO_(3) thin films[J].Applied physics letters,2001(1):111-113. |
| [7] | 廖家轩,魏雄邦,潘笑风,张佳,傅向军,王洪全.交替中间热处理BST薄膜介电性能研究[J].无机材料学报,2009(05):962-966. |
| [8] | Alexander Tkach;Paula M. Vilarinho;Andrei L. Kholkin .Structure-microstructure-dielectric tunability relationship in Mn-doped strontium titanate ceramics[J].Acta materialia,2005(19):5061-5069. |
| [9] | Canedy CL.;Alpay SP.;Salamanca-Riba L.;Roytburd AL.;Ramesh R.;Li H. .Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects[J].Applied physics letters,2000(11):1695-1697. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%