采用改进的垂直布里奇曼法(MVB)分别生长了A1掺杂和In掺杂的Cd0.9Zn0.1Te晶体,并对比分析了掺杂元素对晶体性能的影响.在相同的工艺条件下,A1掺杂晶体获得了6 × 109～2 × 1010Ω·cm的高电阻率,呈弱p或弱n型导电;In掺杂晶体电阻率在105Ω·cm数量级,呈n型导电;A1掺杂晶体在波数4000～500cm-1范围内红外透过率平直且较高,而In掺杂晶体红外透过率随波数下降而降低,在波数1250cm-1处降至零.采用A1掺杂晶片制备的探测器对241Am 59.54keV射线的能量分辨率为14%,表明所生长A1掺杂晶体基本满足了探测器材料使用要求.
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