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  4. 硅基集成电路中Cu互连阻挡层的研究

材料导报, 2010, 24(11): 58-72.

硅基集成电路中Cu互连阻挡层的研究

陈剑辉 1, , 刘保亭 2, , 赵冬月 3, , 杨林 4, , 李曼 5, , 刘卓佳 6, , 赵庆勋 7,

1.河北大学物理科学与技术学院,保定,071002

2.河北大学物理科学与技术学院,保定,071002

3.河北大学物理科学与技术学院,保定,071002

4.河北大学物理科学与技术学院,保定,071002

5.河北大学物理科学与技术学院,保定,071002

6.河北大学物理科学与技术学院,保定,071002

7.河北大学物理科学与技术学院,保定,071002

基金项目:   国家自然科学基金(60876055)   河北省自然科学基金项目(E2008000620;E2009000207)   河北省应用基础研究计划重点基础研究项目(08965124D)   教育部科学技术研究重点项目(207013)  

关键词： Cu 互连 , 扩散阻挡层 , 失效机制

Investigation of Barrier Layer for Cu Interconnection on Si-based Integrate Circuit

随着集成电路向超大规模的发展,Cu互连技术已成为硅工艺领域的热点话题,其关键技术之一--扩散阻挡层的研究越来越受到人们的关注.结合课题组阻挡层的研究工作,介绍了当前Cu互连技术中难熔金属及其氮(碳、硅、氧)化物、多层膜、三元化合物等各类扩散阻挡层材料的研究发展现状,论述了阻挡层的厚度问题、阻挡层研究过程中的分析表征方法以及当前Cu互连的理论研究现状,归纳并分析了阻挡层的失效机制.

参考文献

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