将In2O3和SnO2粉末按质量比1:1热压烧结制成靶材,采用射频磁控溅射制备了高性能的ITO薄膜.实验结果表明:氩气压强对薄膜的电阻率、可见光透射率TVIL有着重要的影响,其最佳值为0.2Pa.ITO膜的方阻、TVIL和颜色与膜厚有着密切的关系. 提高基体温度ts可以改善薄膜的性能,在ts为200℃时,ITO薄膜的TVIL达到90%以上(含玻璃基体),方阻为13.1Ω/□. 根据薄膜生长的3个阶段理论,建立了薄膜厚度与电阻率的关系:在ITO薄膜生长过程中,依次出现热发射和隧道效应、逾漏机制以及Cottey模型导电机理. 由实验结果求得了临界厚度dc约为48～54nm,AFM表征结果进一步表明ITO薄膜随着厚度增加表现出不同的导电机理和尺寸效应.
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