ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

金属学报(英文版), 2007, 20(3): 167-170.

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7,

1.School of Science, Beijing Institute of Petto-Chemical Technology, Beijing 102617, China

2.Center of Engineering Education, Beijing Institute of Petto-Chemical Technology,Beijing 102617, China

3.School of Science, Beijing Institute of Petto-Chemical Technology, Beijing 102617, China

4.School of Materials Science and Engineering, Beijing Institute of Petto-Chemical Technology,Beijing 102617, China

5.Development of Technique, Interuniversity Micro Electronics Center, B-3001 Leuven, Belgium

6.School of Materials Science and Engineering, Technische Universit(a)t Wien, A-1040 Wien, Austria

7.School of Materials Science and Engineering, Katholieke Universiteit Leuven, B-3001 Heverlee(Leuven),Belgium

基金项目: the Foundation of Beijing Municipal Education Commission of China(KM200710017009;Z0610099)

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Keywords： antimony

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

参考文献

[1]	J Zhao;A Wang;S R Wenham;M A Green.[A].Nice,France,1995:1566.
[2]	S Gall;J Schneider;M Muske;I Sieber,O Nast,W Fuhs.[A].Rome,Italy,2002:87.
[3]	S Gall;J Schneider;J Klein;M Muske,B Rau,E Conrad,I Sieber,W Fuhs,D Van Gestel,I Gordon,K Van Nieuwenhuysen,L Carnel,J Irigoyen,G Beaucarne,J Poortmans,M Stoger-Pollach,P Schattschneider,Y Wang,O Van Der Biest.[A].Spain:Barcelona,2005:869.
[4]	S Gall;M Muske;I Sieber;O Nast,W Fuhs .[J].Journal of Non-Crystalline Solids,2002,741:299-302.
[5]	S F Gong;H T G Hentzell;A E Robertsson;L Hultman,S E Hornstrom,G Radnoczi .[J].Journal of Applied Physics,1987,62(09):3726.
[6]	S F Gong;H T G Hentzell;A E Robertsson .[J].Journal of Applied Physics,1988,64(03):1457.
[7]	J R A Carlsson;J E Sundgren;L D Madsen;X H Li,H T G Hentzell .[J].Thin Solid Films,1997,300:51.
[8]	J R A Carlsson;J E Sundgren;X H Li;L D Madsen,H T G Hentzell .[J].Journal of Applied Physics,1997,81:1150.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

参考文献