采用光刻剥离工艺和射频磁控溅射法分别在(100)硅片和ITO玻璃衬底上制备了以氧化锌为沟道层的底栅式薄膜晶体管(ZnO-TFT).用X射线衍射仪、原子力显微镜对生长在绝缘层上的ZnO薄膜进行了表征.在硅衬底ZnO-TFT中,热氧化生长的二氧化硅薄膜作为绝缘层,金属铝用作源漏电极,该器件工作在N沟道增强模式,其阈值电压为8V,电流开关比为5×103,电子的场迁移率达到0.61cm2/(V·s).在以ITO玻璃为衬底的透明ZnO-TFT中,分别采用了SiO2、Al2O3、SiNx、PbTiO3薄膜作为绝缘层,实验表明生长在不同绝缘层上的ZnO薄膜都有很高的c轴择优取向,透明ZnO-TFT在可见光波段的平均透过率达到85%.
参考文献
| [1] | Wagner S.;Gleskova H.;Cheng IC.;Wu M. .Silicon for thin-film transistors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):15-19. |
| [2] | Angelis F D;Toccoli T;Pallaoro A et al.[J].Synthetic Metals,2004,146:291-295. |
| [3] | Kim B D;Jung H;Kim G B et al.[J].Microelectronics Journal,2003,34:767-771. |
| [4] | Choo BK;Choi JS;Kim SW;Park KC;Jang J .Fabrication of amorphous silicon thin-film transistor by micro imprint lithography[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):1704-1707. |
| [5] | Park JH.;Kim DY.;Ko JK.;Chakrabarty K.;Yi J. .High temperature crystallized poly-Si on Mo substrates for TFT application[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):303-308. |
| [6] | Li D;Borkent E J;Nortrup R et al.[J].Applied Physics Letters,2005,86:042105. |
| [7] | Hsieh H H;Wu C C .[J].Applied Physics Letters,2007,91:013502. |
| [8] | Kim II D;Choi Y W;Tuller H L .[J].Applied Physics Letters,2005,87:043509. |
| [9] | Look DC. .Recent advances in ZnO materials and devices[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1/3):383-387. |
| [10] | Ryu Y;Lee T S;Lubguban J A et al.[J].Applied Physics Letters,2006,88:241108. |
| [11] | Oh BY;Jeong MC;Ham MH;Myoung JM .Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors[J].Semiconductor Science and Technology,2007(6):608-612. |
| [12] | Zheng W;Liao Y;Li L;Yu QX;Wang GZ;Li YP;Fu ZX .Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(5):2765-2769. |
| [13] | Choi C H;Kim S H et al.[J].Journal of Crystal Growth,2005,283:170-179. |
| [14] | Kwon Y;Li Y;Heo Y W et al.[J].Applied Physics Letters,2004,84:2685-2687. |
| [15] | Dhananjay;Krupanidhi S B .[J].Journal of Applied Physics,2007,101:123717. |
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