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采用直流磁控溅射法在玻璃衬底上制备了高质量的Nb掺杂ZnO( NZO)透明导电薄膜.为了研究薄膜厚度对薄膜性质的影响,制备了五个厚度分别为239 nm,355 nm,489 nm,575 nm和679 nm的样品.XRD结果表明,ZnO∶ Nb薄膜是具有六角纤锌矿结构的多晶薄膜,并且具有垂直于衬底的c轴择优取向.随着膜厚的增加,薄膜的结晶质量明显提高.当厚度从239 nm增加到489 nm时,平均晶粒尺寸从19.7 nm增加到24.7 nm,薄膜的电阻率持续减小;当厚度进一步增加时,晶粒尺寸略有减小,电阻率有所增加.本实验获得的最低电阻率为4.896×10-4Ω·cm.随膜厚的增加,光学带隙先增大后减小.所有薄膜在可见光区域的平均透过率均超过88.3%.

参考文献

[1] LEE Chongmu,YIM Keunbin,CHO Youngjoon,Lee J.G.A comparison of transmittance properties between ZnO∶Al films for transparent conductors for solar cells deposited by sputtering of AZO and cosputtering of AZO/ZnO[J].稀有金属(英文版),2006(z1):105-109.
[2] Kobayakawa S;Tanaka Y;Ide-Ektessabi A .Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2006(0):536-539.
[3] Kyu-Il LEE;Hyun-Il KANG;Tae-Yong LEE;Jong-Hwan LEE;Joon-Tae SONG .Structural and Electrical Properties of Al-Doped ZnO and Al, B-Codoped ZnO Films Deposited on Flexible Substrate[J].Journal of the Korean Physical Society,2008(5 Pt.1):2407-2410.
[4] Quan-Bao Ma;Zhi-Zhen Ye;Hai-Ping He;Shao-Hua Hu;Jing-Rui Wang;Li-Ping Zhu;Yin-Zhu Zhang;Bing-Hui Zhao .Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2007(1):64-68.
[5] Das A K;Misra P;Kukreja L M .Effect of Si Doping on Electrical and Optical Propertes of ZnO Thin Films Grown by Sequential Pulsed Laser Deposition[J].Journal of Physics D:Applied Physics,2009,42(16):165405-165411.
[6] Chien-Yie Tsay;Hua-Chi Cheng;Yen-Ting Tung;Wei-Hsing Tuan;Chung-Kwei Lin .Effect Of Sn-doped On Microstructural And Optical Properties Of Zno Thinfilms Deposited By Sol-gel Method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(3):1032-1036.
[7] Low-temperature Deposition Of Transparent Conducting Zno:zr Films On Pet Substrates By Dc Magnetron Sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(11):6054-6056.
[8] 刘汉法,袁玉珍,张化福,袁长坤.溅射压强对低阻高透过率掺钛氧化锌透明导电薄膜的影响[J].人工晶体学报,2010(01):185-189.
[9] T. Hitosugi;A. Ueda;S. Nakao;N. Yamada;Y. Furubayashi;Y. Hirose;S. Konuma;T. Shimada;T. Hasegawa .Transparent conducting properties of anatase Ti_(0.94)Nb_(0.06)O_2 polycrystalline films on glass substrate[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(17):5750-5753.
[10] Yasushi Sato;Hideo Akizuki;Toshihisa Kamiyama;Yuzo Shigesato .Transparent conductive Nb-doped TiO_2 films deposited by direct-current magnetron sputtering using a TiO_(2-x) target[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(17):5758-5762.
[11] Nb-doped ZnO transparent conducting films fabricated by pulsed laser deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(13/14):6460.
[12] Shao J Z;Dong W W;Li D et al.Metal-semiconductor Transition in Nb-doped ZnO Thin Fihns Prepared by Pulsed Laser Deposition[J].Thin Solid Films,2010,518:5288-5291.
[13] Ben Amor S.;Baud G.;Jacquet M.;Nardin M.;Rogier B. .Characterization of zirconia films deposited by rf magnetron sputtering[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,1998(1):28-39.
[14] Jung, S.-M.;Kim, Y.-H.;Kim, S.-I.;Yoo, S.-I. .Characteristics of transparent conducting Al-doped ZnO films prepared by dc magnetron sputtering[J].Current applied physics: the official journal of the Korean Physical Society,2011(Suppl.1):S191-S196.
[15] Lv M;Xiu XW;Pang ZY;Dai Y;Han SH .Transparent conducting zirconium-doped zinc oxide films prepared by rf magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2005(5):2006-2011.
[16] 缪存星,赵占霞,栗敏,徐飞,马忠权.沉积压强对Sc掺杂ZnO薄膜性能的影响[J].人工晶体学报,2010(01):139-143.
[17] Zhang H F;Liu H F;Zhou A P et al.Influence of the Distance Between Target and Substrate on the Properties of Transparent Conducting Al-Zr Doped Zinc Oxide Thin Films[J].Journal of Semiconductors,2009,30(11):1130021-1130024.
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