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少层(1~5层)大面积均匀石墨烯的可控制备,是实现石墨烯在逻辑器件和透明导电电极中使用的关键.本工作使用常压化学气相沉积(CVD)方法,在铜镍合金基底上生长出少数层大面积均匀石墨烯.通过调节铜镍合金的厚度以及控制生长过程中的温度、时间、碳源浓度,本工作实现了层数可控石墨烯的制备.光学显微术、拉曼光谱、紫外可见吸收光谱、高分辨率透射电镜表征结果表明:制备出的石墨烯是大面积均匀的高质量少层石墨烯.

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