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含有硫/硒(S/Se)元素的部分化合物在现有中红外非线性晶体材料中占据相当重要的地位.高纯多晶原料是生长优质S/Se光学晶体的基础,但常规合成方法存在周期长、数量少等缺点.为此,针对部分S/Se化合物,我们对传统的合成方法进行优化、改进,实现GaSe,AgGaSe2,AgGaGeS4,AgGaGe5Se12等的快速合成,单次合成原料200~300 g,合成周期小于48 h,经过粉末衍射(XRD)测试表明合成的原料质量较好,能够生长出较大尺寸单晶.文中对快速合成方法的机理、存在的问题等也进行了相关讨论.

参考文献

[1] Yao, Bao-Quan;Shen, Ying-Jie;Duan, Xiao-Ming;Dai, Tong-Yu;Ju, You-Lun;Wang, Yue-Zhu.A 41-W ZnGeP2 optical parametric oscillator pumped by a Q-switched Ho:YAG laser[J].Optics Letters,201423(23):6589-6592.
[2] Kang, Lei;Zhou, Molin;Yao, Jiyong;Lin, Zheshuai;Wu, Yicheng;Chen, Chuangtian.Metal Thiophosphates with Good Mid-infrared Nonlinear Optical Performances: A First-Principles Prediction and Analysis[J].Journal of the American Chemical Society,201540(40):13049-13059.
[3] Lin XS;Zhang G;Ye N.Growth and Characterization of BaGa4S7: A New Crystal for Mid-IR Nonlinear Optics[J].Crystal growth & design,20092(2):1186-1189.
[4] Peter G. Schunemann;Kevin T. Zawilski;Thomas M. Pollak.Horizontal gradient freeze growth of AgGaGeS_4 and AgGaGe_2Se_(12)[J].Journal of Crystal Growth,20062(2):248-251.
[5] Kokh, K.A.;Andreev, Yu.M.;Svetlichnyi, V.A.;Lanskii, G.V.;Kokh, A.E..Growth of GaSe and GaS single crystals[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,20114(4):327-330.
[6] 赵北君;朱世富;李正辉;傅师申;于丰亮;李奇峰.坩埚旋转下降法生长硒镓银单晶体[J].人工晶体学报,1999(4):323-327.
[7] Synthesis And Growth Of Nonlinear Infrared Crystal Material Aggegas_4 Via A New Reaction Route[J].Journal of Crystal Growth,20095(5):1404-1406.
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