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采用Na助熔剂法在7 MPa氮压下并引入较大温度梯度(20~70℃/cm),获得了大量毫米级的GaN晶体,GaN晶体产率高达70%以上.光学及SEM照片显示其晶形大部分为六方锥体.晶体粉末衍射分析表明,生成的GaN单晶具有六方纤锌矿结构,与标准卡片符合得很好,而单晶衍射图谱中出现(1011)的衍射峰,说明GaN单晶锥面为{1011},其(1011)面的摇摆曲线的半高宽仅为4.4 arcsec,室温下采用He-Cd 325 nm激光器激发的GaN单晶的PL谱,最高峰位于标准GaN材料的365nm处,峰的半高宽为13.5 nm,生长的GaN单晶完整性较高.

参考文献

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[9] Morishita M;Kawamura F;Kawahara M;Yoshimura M;Mori Y;Sasaki T .Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using the sodium flux method[J].Journal of Crystal Growth,2005(1/2):91-99.
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