对应变闪锌矿(001)取向GaN-AlxGa1-x N量子阱系统,采用变分法讨论了流体静压力对束缚于界面附近的浅杂质态结合能的影响.计算结果表明,考虑压力对单轴、双轴应变的调制及电子有效质量,材料介电常数及禁带宽度的影响,杂质态的结合能随压力呈线性变化.由简化相干势近似法讨论了垒材料AlxGa1-xN中Al组分对杂质态结合能的影响.结果表明,在阱宽和压力固定时,当Al组分增加时杂质态结合能会逐渐增加;且压力较大时结合能随组分的增加更加显著.Al组分的增加使电子的二维特性增强,从而使结合能增大.
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