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研究了氧分压对ZnO薄膜温差电动势的影响.用直流反应磁控溅射方法成功地制备了C轴取向性能良好的ZnO薄膜.实验研究发现,温差电动势和磁温差电动势随温度的变化呈线形关系.氧分压越大,温差电动势率越小.研究结果还表明,磁温差电动势比温差电动势小.

参考文献

[1] Klingshirn C .The luminescence of ZnO under high one and two-quantum excitation[J].Physica Status Solidi B,1975,71(02):547.
[2] Tang Z K;Zu P et al.Room temperature ultraviolet laser emission from microstructured ZnO thin film[J].Nonlinear Optics,1997,18:355.
[3] Yi L X;Xu Z et al.The ultraviolet and blue luminescence properties of ZnO:Zn thin film[J].Chinese Science Bulletin,2001,46:1223.
[4] Yu P.;Wong GKL.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Tang ZK. .Room-temperature gain spectra and lasing in microcrystalline ZnO thin films[J].Journal of Crystal Growth,1998(0):601-604.
[5] Cao H.;Ong HC.;Ho ST.;Dai JY.;Wu JY.;Chang RPH.;Zhao YG. .Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films[J].Applied physics letters,1998(25):3656-3658.
[6] Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232.
[7] Reynolds DC.;Jogai B.;Morkoc H.;Look DC. .SIMILARITIES IN THE BANDEDGE AND DEEP-CENTRE PHOTOLUMINESCENCE MECHANISMS OF ZNO AND GAN[J].Solid State Communications,1997(9):643-646.
[8] Parauary F D;Estrada W L;Acosta D R N .Morphological differences in ZnO filmsdeposited by the pyrosol technique:effect of HCl[J].Thin Solid Films,1999,350:192.
[9] Ning ZY.;Ge SB.;Chao Y.;Gang ZQ.;Zhang YX.;Liu ZG.;Cheng SH. .PREPARATION AND CHARACTERIZATION OF ZNO-AL FILMS BY PULSED LASER DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):50-53.
[10] Iwata K.;Yamada A.;Matsubara K.;Niki S.;Fons P. .Nitrogen-induced defects in ZnO : N grown on sapphire substrate by gas source MBE[J].Journal of Crystal Growth,2000(2/3):526-531.
[11] Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232.
[12] S. F. Chichibu;T. Yoshida;T. Onuma;H. Nakanishi .Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates[J].Journal of Applied Physics,2002(2):874-877.
[13] Cai K F .Preparation and thermoelectric properties of Aldoped ZnOceramics[J].Materials Science and Engineering,2003,104:45.
[14] 刘恩科;朱秉升;罗晋生.半导体物理学[M].北京:国防工业出版社,1989:287.
[15] So Yonekubo .Thermoelectric power of polycrystalline Si films prepared by microwave plasma chemical vapour depoition[J].Thin Solid Films,1996,159:281-282.
[16] Muhibbullah M .Studies on seebeck effect in spray deposited CuO thin film on glass substrate[J].Thin Solid Films,2003,428:103.
[17] 叶良修.半导体物理学[M].北京:高等教育出版社,1987:588.
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