暗I-V特性曲线是一种有效监测晶硅电池内部杂质和缺陷性质的表征手段.本文利用有限差分法较系统地研究了杂质和缺陷性质对暗I-V特性曲线的影响,并给出了利用暗I-V特性曲线判断晶硅电池内部杂质和缺陷类型和分布的基本准则,结果表明:在大于0.75 V的正向偏压区域,暗I-V特性曲线的明显变化可作为判断为由晶硅电池体内杂质和缺陷引起;在0.1 V~0.75 V的正向偏压区域,暗I-V特性曲线的理想因子分区性质可作为晶硅电池体内和表面杂质和缺陷的依据.
The dark I-V characteristic curve is an effective method to monitor the impurities and defects in the crystalline silicon solar cells.The influence of the properties of impurities and defects on the dark I-V characteristic curve has been systematically discussed by finite difference method, and the basic criteria for determining the type and distribution of impurities and defects in the crystalline silicon solar cells by the dark I-V characteristic curve is given, the results show that the obvious change of the dark I-V characteristic curve can be considered to be caused by the impurities and defects in the silicon solar cell under the forward bias conditions which voltage is greater than 0.75 V;the partition properties of the ideal factor of the dark I-V characteristic curve can be used as the basis of the bulk and surface impurities and defects of the crystalline silicon solar cell under the forward bias conditions which voltage is between 0.1V and 0.75 V.
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