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开展了白光LED用新型YAG单晶荧光材料的制备和光谱性能研究,采用提拉法生长Eu,Ce:YAG及Gd,Ce:YAG晶体,并通过吸收光谱,激发、发射光谱及电光性能等对晶体材料的光谱特性进行表征.结果表明,Eu或Gd共掺杂的Ce:YAG单晶荧光材料均可以被波长460 nm左右的蓝光芯片有效激发,产生一个范围为480~650 nm的宽峰发射.Eu3+或Gd3+共掺杂会对Ce3+离子的发光产生影响:Eu3+离子的掺杂,会对Ce3+离子的发光产生淬灭效应;而Gd3+离子取代基质y3+离子可以使Ce3+离子的发射峰发生红移.

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