化学气相沉积制备纳米结构碳化钨薄膜

功能材料, 2005, 36(5): 789-793.

化学气相沉积制备纳米结构碳化钨薄膜

郑华均 ^1, , 黄建国 ^2, , 马淳安 ^3, , 赵峰鸣 ^4, , 朱英红 ^5,

1.浙江工业大学,化工与材料学院,纳米科学与技术工程中心,浙江,杭州,310032;浙江工业大学,之江学院,浙江,杭州,310024

2.浙江工业大学,化工与材料学院,纳米科学与技术工程中心,浙江,杭州,310032

3.浙江工业大学,化工与材料学院,纳米科学与技术工程中心,浙江,杭州,310032

4.浙江工业大学,化工与材料学院,纳米科学与技术工程中心,浙江,杭州,310032

5.浙江工业大学,化工与材料学院,纳米科学与技术工程中心,浙江,杭州,310032

关键词：碳化钨 , 纳米结构薄膜 , 等离子增强化学气相沉积

Preparation of nanostructure tungsten carbide thin films by PECVD from WF6/CH4/H2 mixtures

Keywords： tungsten carbide , nanostructure thin film , PECVD

采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米结构的碳化钨薄膜.采用SEM、XRD、EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成.通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20、基底温度为800℃的条件下得到的碳化钨薄膜是由直径为20～35nm的圆球状纳米晶构成.通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度.

Nanostructure tungsten carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD)from WF6/CH4/H2/Ar mixture on nickel substrate. The phase compositions and crystal structure of the deposited films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS). The results show that the tungsten carbide thin film deposited at a substrate temperature 800℃ was consisted by some 20～35nm diameter spheroidal nanostructures. Through the analysis of crystal structure and phase compositions, it was concluded that the precursor carburization and substrate temperature are the most important parameters to get nanostructure tungsten carbide thin films.

参考文献

[1]	Sun Y M;Lee S Y;Lemonds A M et al.[J].Thin Solid Films,2001,397:109-115.
[2]	Burstein G T;Barnett C J;Kucernak R J et al.[J].Journal of the Electrochemical Society,1996,143(07):L129.
[3]	Keller V.;Garin F.;Ducros R.;Maire G.;Wehrer P. .CATALYTIC ACTIVITY OF BULK TUNGSTEN CARBIDES FOR ALKANE REFORMING .2. CATALYTIC ACTIVITY OF TUNGSTEN CARBIDES MODIFIED BY OXYGEN[J].Journal of Catalysis,1997(2):125-135.
[4]	Barnett C J;Burstein G T B;Kucernak R J et al.[J].Electrochimica Acta,1997,42(15):2381.
[5]	Mcintyre D R;Burstein G T;Vossen A .[J].Journal of Power Sources,2002,107:67-73.
[6]	Kear B H;McCandlish L E .[J].Nano-Structured Materials,1993,3:19-25.
[7]	Choy K L .[J].Progress in Materials Science,2003,48:57-170.
[8]	Hogberg H.;Lu J.;Jansson U.;Tagtstrom P. .CHEMICAL VAPOUR DEPOSITION OF TUNGSTEN CARBIDES ON TANTALUM AND NICKEL SUBSTRATES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1):116-123.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网