以金属Ag作为红外反射功能层的低辐射多层膜受热易产生团聚,严重损害导电性与低辐射性能.本文提出在金属Ag膜层中掺杂Ti元素,研究Ti掺杂对Ag基低辐射多层膜的团聚抑制作用以及对热处理后性能的影响.采用磁控溅射制备SiN/Ag/SiNx与SiN/Ag-Ti(1.1 at％)/SiNx多层膜,其中Ag(Ti)层厚度为20 nm,并进行真空与非真空热处理(大气环境).通过对比有无Ti掺杂的Ag基多层膜热处理前后的背散射电子形貌、面电阻、辐射率与透光率,发现无论真空还是非真空热处理,Ti掺杂均显著提高Ag膜的热稳定性,抑制团聚的生成.热处理后的面电阻、辐射率与透光率均显著优于未掺杂Ag基多层膜.进一步,观察背散射电子形貌随热处理温度的变化,分析了无掺杂Ag膜团聚的形成过程,并推测了Ti掺杂对Ag膜团聚的抑制机理.
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