{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文将Bagnold剪切理论与Марков过程理论结合起来,研究溜槽类重选设备的分选机理,根据矿粒的理论转移概率,建立了分选指标与给矿参数间的定量关系,并进一步利用细粒人工混合矿在摇动溜槽上的分选结果,验证了所得的数学模型。","authors":[{"authorName":"王卫星","id":"f680a7ec-7d40-4610-be30-42a194bd8df3","originalAuthorName":"王卫星"},{"authorName":"黄枢","id":"1347424e-bbe5-4738-9f72-e774f267b9e4","originalAuthorName":"黄枢"},{"authorName":"陈荩","id":"ad771d85-4db9-4a70-8f6a-f6269d674300","originalAuthorName":"陈荩"}],"categoryName":"|","doi":"","fpage":"89","id":"43eeed8a-14c5-40ae-bbe0-69c092b6befd","issue":"5","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"ac90e28b-6e51-4f1b-a88e-dbb9ee08b573","keyword":"重选","originalKeyword":"重选"},{"id":"93ad3116-c7d5-4d72-9647-d2648066559e","keyword":"mineral processing model","originalKeyword":"mineral processing model"},{"id":"ad47b1e8-8600-4edf-8c8c-abc0f1c48cfd","keyword":"stochastic process","originalKeyword":"stochastic process"},{"id":"584d9fed-b934-44f7-a54b-278f7daf8006","keyword":"Марков process","originalKeyword":"Марков process"},{"id":"3cb4a8e6-050a-40f7-b459-5a4d2819c533","keyword":"sediment transport","originalKeyword":"sediment transport"}],"language":"zh","publisherId":"0412-1961_1989_5_9","title":"三角Марков链在重选中的应用","volume":"25","year":"1989"},{"abstractinfo":"We have studied the electronic transport properties of open Sierpinski gasket systems connected to two electron reservoirs in the presence of a magnetic field. In the framework of a tight-binding model, the systems are composed of one-dimensional ordered chains. A generalized eigenfunction method, which allows one to deal with finite systems consisting of a large number of lattice sites (nodes), is used to calculate the transmission and reflection coefficients of the studied systems. The numerical results show that there are two kinds of symmetries of the transmission coefficient T to magnetic flux Phi, and there are antiresonant state regions (T = 0) and resonant states (T = 1). It is different from the open ring systems now the electronic energies of resonant states do not coincide with the eigenenergies of the isolated Sierpinski gasket systems. It is also found that the transmission behavior of the single exit systems is much more complicated than that of two exit systems. [S0163-1829(99)03640-1].","authors":[],"categoryName":"|","doi":"","fpage":"13444","id":"5ef1da34-aa5c-48c5-ab7d-432e2b09c1ee","issue":"19","journal":{"abbrevTitle":"PRB","id":"41d73232-e732-4216-a5f7-4b352bb955cf","issnPpub":"0163-1829","publisherId":"PRB","title":"Physical Review B"},"keywords":[{"id":"17c6fe73-c271-4a3a-831d-c33016873a42","keyword":"mesoscopic rings;schrodinger-equation;persistent currents;systems;transmission;fractals;model;loop","originalKeyword":"mesoscopic rings;schrodinger-equation;persistent currents;systems;transmission;fractals;model;loop"}],"language":"en","publisherId":"0163-1829_1999_19_1","title":"Electronic transport properties of Sierpinski lattices","volume":"60","year":"1999"},{"abstractinfo":"The transport properties of S(9) clusters sandwiched between gold electrodes are investigated with a combination of density-functional theory and the nonequilibrium Green's-function method. In general we find a rather large conductance both when the cluster is oriented with its symmetry axis parallel to the transport direction and when it is perpendicular to it. In both cases the transmission is dominated by several closely spaced and extremely broad cluster molecular orbitals so that the transmission coefficient is almost flat around the gold Fermi level. This is only marginally affected by the external bias so that the I-V characteristic remains almost linear at least up to 1 V and for both the orientations. Furthermore the electron transport is only little affected by the bond length between the cluster and the electrodes, with the largest sensitivity found for the perpendicular orientation. Our results are rationalized by analyzing the device density of states projected over the various molecular orbitals.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"bbbf6310-7f7f-4c71-877f-26d35dc37c69","issue":"8","journal":{"abbrevTitle":"PRB","id":"48ba155b-d6de-484c-bd85-973be949b8c5","issnPpub":"1098-0121","publisherId":"PRB","title":"Physical Review B"},"keywords":[{"id":"ead54283-be4d-47e1-86a4-4b8ce55081a0","keyword":"junction conductance;ab-initio;approximation;contacts","originalKeyword":"junction conductance;ab-initio;approximation;contacts"}],"language":"en","publisherId":"1098-0121_2010_8_1","title":"Electronic transport across S(9) sulfur clusters","volume":"82","year":"2010"},{"abstractinfo":"We theoretically investigate the electronic transport properties through a rectangular potential barrier embedded in armchair-edge graphene nanoribbons (AGNRs) of various widths. Using the Landauer formula and Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and Outside the barrier, We Calculate analytically the conductance and Fano factor for the both metallic and semiconducting AGNRs, respectively. It is shown that, by some numerical examples, at Dirac point the both types of AGNRs own a minimum conductance associated with the maximum Fano factor. The results are discussed and compared with the previous relevant works. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"761","id":"66ca8780-9a5f-4719-a9d5-f8e48a283fa1","issue":"5","journal":{"abbrevTitle":"PLA","id":"7b364793-d718-49d5-9832-ec34f0748fdf","issnPpub":"0375-9601","publisherId":"PLA","title":"Physics Letters A"},"keywords":[{"id":"edb0879f-28a8-4193-b3ac-f8a57ed8aaa4","keyword":"AGNRs;Electronic transport;Scattering matrix;ribbons;gas","originalKeyword":"AGNRs;Electronic transport;Scattering matrix;ribbons;gas"}],"language":"en","publisherId":"0375-9601_2010_5_1","title":"Electronic transport for armchair graphene nanoribbons with a potential barrier","volume":"374","year":"2010"},{"abstractinfo":"Using first-principles calculations, we investigate the electronic structure of CoSb(3) compound by considering the spin-orbit interaction. Within the framework of Boltzmann theory, the transport coefficient (power factor) is evaluated as a function of chemical potential assuming a rigid-band picture and constant relaxation time. It is found that appropriate n-type doping in the compound may be better than p-type doping to enhance the power factor. Our theoretical calculations give a plausible guide on how to optimize the thermoelectric performance of this compound, and the upper limit of its ZT value is estimated.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"c737fcb2-3e72-49d2-a46b-3b97bf57d20e","issue":"11","journal":{"abbrevTitle":"JOPDP","id":"8a34b94c-f12f-48b4-9244-e8a08cb36e20","issnPpub":"0022-3727","publisherId":"JOPDP","title":"Journal of Physics D-Applied Physics"},"keywords":[{"id":"75f77e22-1115-465f-acb3-dc86afffa71e","keyword":"thermoelectric properties;cobalt triantimonide;cosb3;alloys;model","originalKeyword":"thermoelectric properties;cobalt triantimonide;cosb3;alloys;model"}],"language":"en","publisherId":"0022-3727_2009_11_1","title":"Electronic structure and transport coefficients of binary skutterudite antimonide","volume":"42","year":"2009"},{"abstractinfo":"Magnetic, electronic transport and magneto-transport behaviors of CoxFe1-xMnP (0.40 <= x <= 0.75) compounds have been investigated systematically. Co0.4Fe0.6MnP is antiferromagnetic below its Neel temperature of 310 K, while an anomalous increase of resistivity occurs with decreasing the temperature from 350 to 190 K, which is attributed to the effect of critical spin fluctuation on resistivity. Increasing Co concentration gives rise to dramatic changes of magnetic, electronic transport and magneto-tran sport behaviors. With increasing temperature, a magnetic phase transition from an antiferromagnetic state to a ferromagnetic one takes place at about 280, 218 and 180K for Co0.55Fe0.45MnP, Co0.65Fe0.35MnP and Co0.75Fe0.25MnP, respectively. Moreover, the compounds experience a metal-insulator transition at 26, 29, 35 and 45 K, respectively, for x = 0.40, 0.55, 0.65 and 0.75. Maximum magnetoresistance ratios of -8.1%, -4.7% and -2.9% are observed in the Co0.75Fe0.25MnP, Co0.65Fe0.35MnP and Co0.55Fe0.45MnP compounds at an external magnetic field of 5 T. The mechanisms of magnetoresistance behaviors are interpreted in terms of the suppression of spin fluctuations in the antiferromagnets by the applied fields. (c) 2006 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"29","id":"9cea54b0-4423-45e1-8c89-ff3d4bf79ddf","issue":"42737","journal":{"abbrevTitle":"JOAAC","id":"de8b3eb8-d3c1-4889-812c-8ad260eabadc","issnPpub":"0925-8388","publisherId":"JOAAC","title":"Journal of Alloys and Compounds"},"keywords":[{"id":"c071d8ae-11bc-47b7-abef-d77d7e89aba1","keyword":"antiferromagnetic;Anderson transition;magnetoresistance;magnetoresistance;resistivity;transition;systems;alloys","originalKeyword":"antiferromagnetic;Anderson transition;magnetoresistance;magnetoresistance;resistivity;transition;systems;alloys"}],"language":"en","publisherId":"0925-8388_2007_42737_21","title":"Magnetic, electronic transport and magneto-transport behaviors of CoxFe1-xMnP compounds","volume":"429","year":"2007"},{"abstractinfo":"Magnetic, electronic transport and magneto-transport behaviours of (Co1-xMnx)(2)P (0.55 <= x <= 0.675) compounds have been systematically investigated. A typical metallic-conductivity behaviour is observed in the ferromagnetic compound (Co0.45Mn0.55)(2)P. The increase in the Mn concentration gives rise to dramatic changes in magnetic, electronic transport and magneto-transport behaviours. With increasing temperature, a first-order phase transition from antiferromagnetism to ferromagnetism takes place at about 145 K, 185K and 240K for x = 0.60, 0.625 and 0.65, respectively. (Co0.4Mn0.6)(2)P and (Co0.375Mn0.625)(2)P compounds experience a metal-insulator transition (Anderson transition) with decreasing temperature. An external magnetic field of 5 T strongly influences the Anderson transition, lowering the transition temperature from 80 to 55K for (Co0.4Mn0.6)(2)P and from 115 to 70K for (Co0.375Mn0.625)(2)P. In contrast with this metal-insulator transition, an insulating behaviour appears in the temperature range from 10 to 300K for (Co0.35Mn0.65)(2)P and (Co0.325Mn0.675)(2)P compounds. Below the antiferromagnetic-ferromagnetic transition temperature TAF-F, a metamagnetic transition can be induced by an external magnetic field. The metamagnetic transition is accompanied by a maximum magnetoresistance ratio of -7%, -6.3% or -3.7% at 5 T in the (Co0.4Mn0.6)(2)P, (Co0.375Mn0.625)(2)P or (Co0.35Mn0.65)(2)P compound at 10 K. The mechanisms of magnetoresistive behaviours are discussed in terms of the formation of a super-zone gap in the antiferromagnetic state.","authors":[],"categoryName":"|","doi":"","fpage":"4304","id":"cd356fe3-b99a-4796-91e1-e0a7ede7688e","issue":"20","journal":{"abbrevTitle":"JOPDP","id":"8a34b94c-f12f-48b4-9244-e8a08cb36e20","issnPpub":"0022-3727","publisherId":"JOPDP","title":"Journal of Physics D-Applied Physics"},"keywords":[{"id":"2ea68bb4-b34e-4f22-b490-b0698ef3d3a8","keyword":"metamagnetic-transition;solid solutions;resistivity;systems;magnetoresistance;anomalies;alloys;field","originalKeyword":"metamagnetic-transition;solid solutions;resistivity;systems;magnetoresistance;anomalies;alloys;field"}],"language":"en","publisherId":"0022-3727_2006_20_1","title":"Magnetic, electronic transport and magneto-transport behaviours of (Co1-xMnx)(2)P compounds","volume":"39","year":"2006"},{"abstractinfo":"An anisotropic layered model structure composed of line-groups as an anisotropic bilayered manganite, is constructed based on elementary interactions in bilayered manganites. The anisotropic magneto-transport property is investigated using microscopic resistor-network scheme. The simulation reproduces qualitatively the main magnetotransport behaviors of bilayered rnanganites. It is shown that both the magnetic structure and the values of resistors in the resistor-network influence the electronic transport of the whole system. The resistors within the line-groups and between the line-groups play different roles in modulating the transport behaviors.","authors":[],"categoryName":"|","doi":"","fpage":"418","id":"aec9a281-9978-430b-b8a4-42754c7be606","issue":"42739","journal":{"abbrevTitle":"JOE","id":"b3f14ff8-7d39-40c3-862b-c14e1f1d8c03","issnPpub":"1385-3449","publisherId":"JOE","title":"Journal of Electroceramics"},"keywords":[{"id":"2d2705a6-ad3a-4ec4-8cdb-dad18a6c1704","keyword":"Ising model;Monte Carlo;Bilayer manganite;magnetoresistance;transport;manganites;transition;films","originalKeyword":"Ising model;Monte Carlo;Bilayer manganite;magnetoresistance;transport;manganites;transition;films"}],"language":"en","publisherId":"1385-3449_2008_42739_4","title":"Monte Carlo simulation of magneto-transport property in anisotropic layered structures","volume":"21","year":"2008"},{"abstractinfo":"With a self-consistent fluid model, we study the transport characteristics of the collisionless radio frequency (rf) sheath in a high density plasma and calculate the spatiotemporal ion density and the potential drop across the sheath in one rf cycle for an rf-bias frequency of 13.56 MHz. We also study the effects of the rf frequency on the voltage at the electrode, the sheath width, the ion energy distribution (IED) and the ion angular distribution (IAD) at the electrode. The simulated results indicate that the incidence angles of the ions impinging on the electrode are less than 8 degrees when the ion velocity in the direction perpendicular to the sheath field is assumed to be a Boltzmann distribution. It is concluded that the rf frequency plays a crucial role for the energy and angular distributions of ions impinging on the electrode surface, and the IED and IAD are affected by the plasma density and the rf-bias power.","authors":[],"categoryName":"|","doi":"","fpage":"1899","id":"369dade4-52eb-4fb8-8387-f88f9fa35c9c","issue":"12","journal":{"abbrevTitle":"JOPDP","id":"8a34b94c-f12f-48b4-9244-e8a08cb36e20","issnPpub":"0022-3727","publisherId":"JOPDP","title":"Journal of Physics D-Applied Physics"},"keywords":[{"id":"009ef8f8-4bf9-4c16-a855-c278c26500e5","keyword":"density plasma reactors;energy-distribution","originalKeyword":"density plasma reactors;energy-distribution"}],"language":"en","publisherId":"0022-3727_2005_12_1","title":"Simulation of ion transport characteristics in a collisionless rf sheath","volume":"38","year":"2005"},{"abstractinfo":"We report the electronic transport properties of a composite system comprising zero dimensional superconducting NbC(C) nanocapsules and carbon nanofiber matrix. DC susceptibility measurements of the nanocomposite indicate that the critical temperature (T-C) of NbC nanocrystals is 10.7 K. The temperature dependence of electrical resistivity of the specimen pellet follows the Mott's T-1/4 law in a temperature range between T-C of NbC and 300 K, owing to a strong degree of structural disorder in the carbon matrix. Below the T-C of NbC, when the change of its electrostatic energy Delta E is far greater than the thermal energy, an electron will be localized on an isolated NbC nanocrystal at very low temperatures, leading to \"Coulomb Blockade.\" As a result, a collective behavior of the single-electron tunneling effect takes place in a three-dimensional granular superconductors' network composed of the NbC/carbon/NbC tunneling junctions. The superconducting gap of NbC crystals is not found in the current-voltage curves, due to the suppression of surface superconductivity through the contact between NbC and carbon shells.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"50eadb9c-6fef-4bce-838a-be3d7d4904a2","issue":"19","journal":{"abbrevTitle":"PRB","id":"48ba155b-d6de-484c-bd85-973be949b8c5","issnPpub":"1098-0121","publisherId":"PRB","title":"Physical Review B"},"keywords":[{"id":"3b258b07-8ad2-4165-9873-4054bd188efd","keyword":"zero-dimensional superconductor;granular metal-films;particles;conduction;nanocapsules;percolation;samples","originalKeyword":"zero-dimensional superconductor;granular metal-films;particles;conduction;nanocapsules;percolation;samples"}],"language":"en","publisherId":"1098-0121_2006_19_3","title":"Electronic transport properties of NbC(C)-C nanocomposites","volume":"73","year":"2006"}],"totalpage":44,"totalrecord":435}