目的：探讨基片偏压对镁合金Ti/TiN膜层质量的影响。方法利用多弧离子镀技术,在不同偏压条件下,对镁合金先镀Ti再镀TiN,通过SEM观察膜层形貌,通过划痕测定膜基结合性能,通过电化学工作站对比AZ31镁合金与不同偏压镀膜试样的耐蚀性。结果偏压为200 V时,TiN膜层致密均匀且成膜速度快,膜层耐蚀性最好；偏压为200 V时,基体结合最好且膜层较厚,有较好的耐蚀性。结论镀Ti 膜时的偏压对随后镀TiN的质量有着显著的影响,以200 V偏压的工艺镀TiN膜层质量最好,膜层致密,成膜速度快,耐蚀性优良。
ABSTRACT:Objective To explore the effect of substrate bias on the quality of Ti/TiN film. Methods Making use of the technol-ogy of multi-arc ion plating, magnesium alloy was plated with Ti followed by TiN plating under different bias voltage. The morphol-ogy of films was observed by SEM, the adhesion of the film with substrate was investigated by scratch tester, and the corrosion re-sistance of film samples plated with different bias was compared to that of AZ31 magnesium alloy through electrochemical working station. Results When the bias voltage was 200 V, the TiN film was uniform and compact, the velocity of film formation was quick, and the corrosion resistance of the film was the best. When the bias voltage was 200 V, the film had the strongest bonding with the substrate and considerable thickness, besides, the corrosion resistance was relatively high. Conclusion Bias voltage during Ti plating of film had significant impact on the quality of the subsequent TiN plating, and the coating quality was the best when the bias voltage was 200 V, the resulting film was compact, the velocity of film formation was fast, and the film had excellent corrosion resistance.
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