利用热压烧结工艺制备了含20%～65%SiC(体积分数,下同)颗粒的SiCp/Cu复合材料.在室温到600℃温度范围内测定了复合材料的电阻率.结果表明,随着SiC颗粒含量的增加,SiCp/Cu复合材料的电阻率提高,电阻率渗滤阈值发生在SiCp含量大约55%时;含有20%～35%SiC颗粒的SiCp/Cu复合材料的电阻率随温度的升高而线性增加,表现为铜的电导特征;而含有50%～65%SiC颗粒的SiCp/Cu复合材料的电阻率随温度的升高在225～500℃温度范围内明显偏离线性增加关系.
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