用三源真空共蒸发沉积CuInSe_2。调节三源的配方及蒸发速率,控制薄膜的组分,获得了具有单相黄铜矿结构的多晶CuInSe_2薄膜。发现适当的热处理对薄膜的成相是必需的。研究了薄膜组分、结构、光学和电学性质与工艺条件的关系。
Thin films of CuInSe_2 have been co-evaporated in vacuum bythree-sources process.The compositions of the films have been controlled by ratio of theelements in the three sources and temperature of the three sources.Satisfactary compositionand single chalco
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