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通过对聚酰亚胺薄膜绕包铜扁线的工艺研究,分析了聚酰亚胺薄膜绕包铜扁线的耐电晕性能。结果表明:影响聚酰亚胺薄膜绕包铜扁线耐电晕性能的主要因素为烧结温度、绕包张力和红外辐射炉温度。当烧结温度为230℃,绕包张力为8 N,红外辐射炉温度为450℃时,聚酰亚胺薄膜绕包铜扁线的耐电晕性能最佳。

The corona-resistance of flat copper wire winded by polyimide film was analyzed by studying the technology of the flat copper wire. The results show that the main factors influencing the corona-resis-tance are sintering temperature, winding tension and infrared radiation oven temperature. When the sinter-ing temperature is 230℃, winding tension is 8 N, infrared radiation oven temperature is 450℃, the coro-na-resistance of the flat copper wire winded by polyimide film is optimum.

参考文献

[1] 刘佳音,周升,唐文进,杨名波,姜其斌.耐电晕聚酰亚胺薄膜绕包扁铜线烧结工艺的研究[J].绝缘材料,2011(04):20-23.
[2] 楼南寿.变频电机用电磁线[J].电线电缆,1999(03):19-20.
[3] 楼南寿,凌春华,付金栋,任勇.耐电晕绕组线的发展[J].电线电缆,2004(04):13-15.
[4] 毛亚莉,顾新梅.耐电晕特种绕组线的制造及应用[J].绝缘材料,2001(05):20-23.
[5] 黄孙息,饶保林,刘莉.耐电晕聚酰亚胺薄膜研究进展[J].绝缘材料,2009(01):21-24.
[6] 罗艳芝,姜其斌,王文进,李鸿岩,李强军.几种绝缘结构和绝缘材料的高频耐电晕性能分析[J].绝缘材料,2010(03):57-59.
[7] 徐永芬,虞鑫海,费斐,赵炯心.新型聚酰亚胺薄膜的制备及其性能研究[J].绝缘材料,2010(03):1-4.
[8] 何明鹏,刘俊,陈昊,李娟,范勇.纳米氧化铝改性聚酰亚胺薄膜的制备与研究[J].绝缘材料,2010(01):1-3.
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