为了获得高纯单相LiGaS2多晶原料,采用LiGa与S化合法合成LiGaS2,并与传统的单质直接合成法相对比.利用垂直长石英管作为反应器,采用X射线衍射和Raman光谱对其结构进行表征,同时利用差热–热重分析和紫外光谱对其热性能和光学性能进行研究.研究表明：采用LiGa与S化合法可以获得单相、均一的LiGaS2多晶材料;LiGaS2中的Li–S键平均力常数为fLi-S=16.0 N/m,Ga–S键平均力常数为fGa-S=39.6 N/m;LiGaS2多晶料的熔点为1 020℃,温度低于1 100℃,样品很稳定,没有分解现象;白色样品、黄色样品和灰色样品的紫外吸收边分别为323,435和496 nm.
In order to obtain pure and high-quality LiGaS2 polycrystalline material, a novel synthesis method from LiGa and S was proposed and compared with the direct synthesis method from elements. The vertical long tube quartz reactors were applied as the bottom of this reactor being the high temperature zone and the top of this reactor being the low temperature zone. The structure was characterized by the X-ray powder diffraction （XRD） and Raman spectra. The thermal behavior and optical property of samples were also studied by the sim- ultaneous differential scanning calorimetry/thermogravimetric （TG-DTA）and ultraviolet visible diffuse reflec- tance spectra（UV-vis）. The results show that the pure and high-quality LiGaSz polycrystalline material can be obtained from the combinational method of LiGa and S. The effective force constants fLi- S and fGa-s for Li - S and Ga - S interactions are determined to be 16.0 N/m and 39.6 N/m,respectively. The melting point of Li- GaS2 is 1 020 ℃ and this material is stable under 1 100 ℃. The ultraviolet absorption edges of white, yellow and grey samples are 323,435 nm and 496 nm,respectively.
参考文献
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