以四氯化钛为前驱体,以ZnCl2为锌源,采用溶胶-凝胶法在纯钛基体上制备了Zn掺杂纳米TiO2薄膜(Zn-TiO2),研究了温度对Zn掺杂纳米TiO2薄膜在0.2mol/L Na2SO4中的光电化学性能的影响.根据Mott-Shottky曲线可知,Zn-TiO2薄膜为n型半导体；经过300℃热处理的Zn-TiO2薄膜,导带位置最高,空间电荷层宽度W最大.从电化学阻抗谱得到,光照下300℃热处理的Zn-TiO2薄膜电阻较暗态下降低最多.通过线性伏安曲线发现,300℃热处理的Zn-TiO2薄膜具有最强的光电流.
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