随着真空紫外光学技术的发展,在深紫外波段透过率最高、截止波段最短的氟化锂晶体重新引起人们的关注.本文结合LiF晶体本身的物理化学性质,综述了氟化锂原料制备工艺、晶体生长方法的研究进展及存在的问题.以提高氟化锂光学元件质量为出发点,总结了原料纯化、晶体生长、加工工艺对光学元件质量的影响和有效的解决措施.
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