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Sn镀层表面在某些情况下会长出长达数百微米的晶须,在电子器件服役过程中会导致电路短路等严重的可靠性问题.目前普遍认为内部压应力是导致Sn晶须生长的主要动力之一;晶须生长所需的Sn原子主要以扩散方式或位错运动方式提供,而温度因素既影响原子扩散速度,又影响镀层的应力松弛.预镀Ni或者预先热处理以形成扩散阻挡层来抑制晶须生长的方法较为常用.温度循环是加速晶须生长的一种有效手段.

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