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氮化硅薄膜具有优良的光电性能、绝缘耐压性能、机械性能以及钝化性能等,在光电子、微电子等大规模集成电路和半导体器件制造中有着广泛的应用.重点评述了制备氮化硅薄膜的几种常用方法,并介绍了氮化硅薄膜的主要性能及其应用.

参考文献

[1] ChenSM;Shanmon J M;Gwilliam R M et al.[J].Surface and Coatings Technology,1997,93(2/3):269.
[2] KSSeol;T Futami;T Watanabe.Effects of ion im plantation and thermal annealing on the photoluminescence in amorphous silicon nitride films[A].,1998:1.
[3] Schmid P.;Vogt M.;Orfert M. .Plasma deposition of Si-N and Si-O passivation layers on three-dimensional sensor devices[J].Surface & Coatings Technology,1998(1/3):1510-1517.
[4] ishoreT;Sing S N;Das B K .[J].Solar Energy Materials and Solar Cells,1992,26(01):27.
[5] 林喜斌,林安中.PECVD在多晶硅上沉积氮化硅膜的研究[J].中国稀土学报,2003(z1):162-163.
[6] H.T. Philipp;K.N. Andersen;W. Svendsen;H. Ou .Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics[J].Electronics Letters,2004(7):419-421.
[7] GroveWR.[J].Transactions of The Faraday Society,1852:87.
[8] LangmuirI .[J].General Electrical Review,1923,26:731.
[9] SteinHJ;Wells V A et al.Properties of plasma-deposited silicon nitride[J].Journal of the Electrochemical Society,1979,10:1750.
[10] 邱春文,陈雄文,石旺舟,欧阳艳东.磁控反应溅射法低温制备氮化硅薄膜[J].汕头大学学报(自然科学版),2003(02):35-39.
[11] StenhenA;Campbell.The science and engineering of microelecrtronic fabrication Second edition[M].北京:电子工业出版社,2003:337.
[12] SaritaT;Satake T;Adachi H et al.MassspectrometricandkineticstudyoflowpressurechemicalvapordepositionofSi3N4thinfilmsfromSiH2Cl2andNH3[J].Journal of the Electrochemical Society,1994,29(04):3505.
[13] ZamomLS;Mansano R D;Fuflan R et al.LPCVDdepositionofsiliconnitrideassistedbyhighdensityplasma[J].Thin Solid Films,1999,343-344:299.
[14] VokeN;Kanicki .[J].Materials Research Society Symposium Proceedings,1986,68:175.
[15] 茅冬生,谭满清.ECR Plasma CVD 法淀积介质膜技术在半导体光电器件中的应用[J].半导体学报,1999(09):837.
[16] 于威,刘丽辉,侯海虹,丁学成,韩理,傅广生.螺旋波等离子体增强化学气相沉积氮化硅薄膜[J].物理学报,2003(03):687-691.
[17] 杨辉;马青松;葛曼珍 .CVD法氮化硅薄膜制备及性能[J].陶瓷学报,1998,19(02):91.
[18] 杨邦朝;王文生.薄膜物理与技术第1版[M].成都:电子科技大学出版社,1994:130.
[19] MahapatraS;Rao V R;Cheng B et al.Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs[J].IEEE Transactions on Electron Devices,2001,48(04):679.
[20] JensD;Moschner;Jan Schmldt et al.Thermo-catalytic deposition of silicon nitride-a new method for excellent silicon surface passivation[J].IEEE Transactions on Electron Devices,2002,19-24:174.
[21] GriecoMJ et al.Silicon nitride thin films from SiCl4 plus NH3: preparation and properties[J].Journal of the Electrochemical Society,1968,115(05):525.
[22] SedgwickTO et al.[J].IBM Journal of Research and Development,1970,14(01):2.
[23] 黄卫东,王旭洪,盛玫,徐立强,Frank Stubhan,罗乐,冯涛,王曦,张富民,邹世昌.有机发光器件的低温氮化硅薄膜封装[J].功能材料与器件学报,2003(02):179-184.
[24] HaipingDun;Paihung Pan;Francis et al.Mechanisms of plasma-enhanced silicon nitride deposition uesing SiH4/N2mixture[J].Journal of the Electrochemical Society,1981,128(07):1555.
[25] JuangC et al.Properties of very low temperature plasma deposited silicon nitride films[J].Journal of Vacuum Science and Technology,1992,10(03):1221.
[26] KuiperAET .Thermal oxidation of silicon nitride temperature on the oxidation resistance and electrical characteristics of silicon nitride[J].IEEE Transactions on Electron Devices,1994,41(10):174.
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