欢迎登录材料期刊网

材料期刊网

高级检索

针对三重进口行星式CVD反应器的输运过程进行了二维数值模拟研究.通过改变反应腔几何尺寸、导流管位置、三重进口流量组合、压强、温度等条件,研究反应器内对流涡旋的相应变化.根据模拟结果,对这类反应器中输运现象与外部参数的关系,特别是反应腔内对流涡旋的产生和发展作了较全面的分析和讨论,给出了抑制对流涡旋、获得薄膜生长所需的最佳输运过程的条件.

参考文献

[1] M L Hitchman;K F Jensen.Chemical Vapor Deposition[M].Academic Press,1993
[2] C R Kleijn.Numerical Simulation of Flow and Chemistry in Thermal Chemical Vapor Deposition Processes[A].Kluwer Academic Publisher,2002:119-144.
[3] R A Talalaev;E V Yakovlev;S Yu Karpov et al.Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000HT Planetary reactor[J].MRS Internet Journal of Nitride Semiconductor Research,1999,4(05):1-5.
[4] S Mazumder;S A Lowry .The Importance of Predicting Rate-Limited Growth for Accurate Modeling of Commercial MOCVD Reactors[J].Journal of Crystal Growth,2001,224:1-2.
[5] P M Frijlink;J L Nicolas;H P M M Ambrosius et al.The Radial Flow Planetary Reactor: Low Pressure Versus Atmospheric Pressure MOVPE[J].Journal of Crystal Growth,1991,115:203-210.
[6] Kepler GM.;Scroggs JS.;Bachmann KJ.;Hopfner C. .Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,1998(1):9-17.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%