在不同沉积温度(25 ～ 400℃)下,利用射频磁控溅射技术在S i(100)基底上制备了TiN薄膜.采用X射线衍射仪和原子力显微镜研究了沉积温度对膜结构和表面形貌的影响,计算了晶面间距和晶格常数,分析了薄膜的应力性质.实验结果表明,不同沉积温度下制备的TiN薄膜主要含有(111)和(220)两种取向,以(220)为择优取向;随着温度的升高,薄膜晶化质量先提高然后趋于稳定.薄膜内应力为压应力,且随温度的升高而有所增大.随沉积温度升高,薄膜晶粒尺寸变小,表面结构更加均匀致密.
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