在Ni基底上电镀Te薄膜,然后在不同温度下对样品进行相同时间的真空热处理,经室温拉断后测得样品沿晶界断裂深度x.通过拟合Ln(x2/t)与1/T的线性关系求出扩散激活能,得出中低温段Te在纯Ni中的晶界扩散系数,并对实验结果和计算进行了讨论.结果表明,在Ni表面镀Te条件下,随温度的升高,Ni的抗拉强度及延伸率急剧下降,试样断口上的沿晶断裂深度逐渐增大;计算得出Te沿纯Ni晶界扩散的激活能为152 k J/mol,并得出在500℃到1 000℃之间的扩散系数表达式为:D=0.83×10-2 exp(-18 360/T) cm2/s.
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