采用高温固相法在弱还原气氛下制备了Ca0.955Al2Si2-xGexO8∶Eu2+(x=0～1.0)系列荧光粉,研究了Ge4+置换Si4+对其晶体结构和光谱特性的影响.Ge4+以类质同相替代CaAl2Si2O8晶格中的Si4+形成连续固溶体,晶胞参数a,b,c,γ和晶胞体积V随Ge4+置换量呈线性递增；而晶面夹角α和β随Ge4+置换量的增加呈线性递减.荧光激发谱为宽带,位于230nm～420nm,可拟合成四个峰,表观峰值位于351nm;随着Ge4+置换量的增加,半高宽从114nm减小到96nm.发射光谱位于375nm～600nm,可由422nm和458nm两峰拟合而成,表观峰值位于426nm；随着Ge4+置换量Si4+进入基质晶格,造成Eu-O距离变小,发光中心Eu2+所处晶体场增强,5d轨道能级分裂变大,最低发射能级下移,两拟合峰均线性红移.
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