Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE

稀土学报(英文版), 2006, 24(z1): 1-3.

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1.Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan

2.Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan

3.Electronic Materials Division, Electronics Section, Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan

4.Electronic Materials Division, Electronics Section, Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan

5.Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan

6.Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan

基金项目: the project, Hybrid Nanostructured Materials and their Applications at the Research Centre for Advanced Science and Technology (RCAST) of Doshisha University through the 'High-Tech Research Center' Project for Private University

Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE

Keywords： molecular beam epitaxy

Superlattices with varying GaN well widths (2, 3, 6, 9 nm) and fixed AlGaN barrier (8 nm) with high Al-content (x=0.65) were grown. Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the GaN/AlGaN pairs. The AlGaN barrier XRD peak also shifted with increasing well widths, while the GaN XRD peak was nominally unchanged. Room temperature photoluminescence experiments revealed peak emissions at energies lower than the bulk GaN energy gap. The large red shift with respect to the bulk gap is attributed to significant Stark effect for wide multiple quantum wells.

参考文献

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Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE

参考文献