采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。
Ga doped ZnO nanowires with large length-diameter ratio were synthesized by chemical vapor deposition method using Sn catalyst.The diameter of the nanowires is around 25-90nm.Room temperature photoluminescence results of the Ga doped ZnO nanowires show that the intensity of the ultra violet emission increases,and the position of the ultra violet emission shift to short wavelength with the doping of Ga.While the blue-shift degree decrease with Ga doping,and turn to red-shift with heavy doping.The doping of Sn only affects on the blue-green emission of the Ga doped ZnO nanowires.
参考文献
| [1] | 郭佳林,常永勤,王明文,陆映东,龙毅.Sn掺杂ZnO纳米带的制备及其光致发光性能研究[J].功能材料,2009(02):332-334. |
| [2] | Kato H.;Sano M.;Miyamoto K.;Yao T. .Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy[J].Journal of Crystal Growth,2002(Pt.1):538-543. |
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