多晶氧化铍陶瓷上金刚石薄膜的生长

中国有色金属学报, 2009, 19(4): 766-772.

多晶氧化铍陶瓷上金刚石薄膜的生长

陈永勤 ^1, , 余志明 ^2, , 方梅 ^3, , 魏秋平 ^4, , 陈爽 ^5,

1.中南大学,材料科学与工程学院,长沙,410083;中南大学,粉末冶金国家重点实验室,长沙,410083;中南大学,有色金属材料科学与工程教育部重点实验室,长沙,410083

2.中南大学,材料科学与工程学院,长沙,410083;中南大学,粉末冶金国家重点实验室,长沙,410083;中南大学,有色金属材料科学与工程教育部重点实验室,长沙,410083

3.中南大学,材料科学与工程学院,长沙,410083

4.中南大学,材料科学与工程学院,长沙,410083;中南大学,粉末冶金国家重点实验室,长沙,410083;中南大学,有色金属材料科学与工程教育部重点实验室,长沙,410083

5.中南大学,材料科学与工程学院,长沙,410083

基金项目: 粉末冶金国家重点实验室开放基金(2008112048) 中南大学贵重仪器开放共享基金(ZKJ2008001) 湖南省研究生创新基金(1343-74236000005)

关键词：金刚行薄膜 , 氧化铍 , 热丝化学气相沉积 , 工艺参数 , 热导率

Growth of diamond films on berillia ceramic

采用热丝化学气相沉积(HFCVD)系统,以CH4和H2为反应气体,在多晶氧化铍陶瓷基体上沉积了金刚石薄膜.采用场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和激光热物性测试仪进行检测分析,研究工艺参数对金刚石薄膜生长及膜/基复合体热学性能的影响.结果表明:随着CH4浓度的增加(或CH4浓度一定,反应气体总流量增加),金刚石晶粒尺寸逐渐减小,膜/基复合体的热导率逐渐降低;当CH4浓度为2%(体积分数),流量为30 cm3/min,压强为1.33 kPa时,沉积的膜/基复合体的热导率最高,可达2.663 W/(cm·K).

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