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热释电红外探测器具有探测波长范围广、室温工作、无需致冷等优点.近年来,工作于介电方式下的PbSc0.5Ta0.5O3 (PST)热释电材料由于具有热释电系数大,热释电探测优值高等特点,成为热释电应用研究的热点之一.本文综述了目前PST热释电陶瓷材料的介电,热释电性能及其探测器列阵的发展.由于小型化的要求,PST薄膜亦倍受关注,因此本文还对目前PST热释电薄膜的制备方法,薄膜的热释电、介电性能及薄膜型探测器结构和发展进行了概述.

参考文献

[1] watton R;Manning P .[J].SPIE,1998,3436:541-686.
[2] Park Y K;Ju B K;Park H W et al.[J].SPIE,1999,3892:356-363.
[3] Xu W X;Pan X G;WANG P Y et al.[J].压电与声光,1998,20(06):423-427.
[4] Wang X R;Zhang X W;Gui Z L et al.[J].Journal of Materials Research,1996,10(01):57-62.
[5] Xiong Z X;Baba-Kishi K Z;Shin F G et al.[J].Ferroelectrics,1999,229:153-158.
[6] Chu F.;Setter N.;Fox GR. .Dielectric properties of complex perovskite lead scandium tantalate under dc bias[J].Journal of the American Ceramic Society,1998(6):1577-1582.
[7] Osbond PC;Whatmore R W .[J].Journal of Materials Science,1993,28:1377-1384.
[8] Yasuda N;Ohwa H;Fujioka E et al.[J].Japanese Journal of Applied Physics,1999,38:5483-5487.
[9] Giniewicz J R;Bhalla A S;Cross L E .[J].FERROELECTRICS,1998,211:281-297.
[10] Giniewicz JR.;Cross LE.;Bhalla AS. .IDENTIFICATION OF THE MORPHOTROPIC PHASE BOUNDARY IN THE LEAD SCANDIUM TANTALATE LEAD TITANATE SOLID SOLUTION SYSTEM[J].Journal of Materials Science,1997(9):2249-2253.
[11] watton R;Manning P A;Perkins M C J et al.[J].SPIE,1996,2744:486-499.
[12] 黄承彩.混合式非致冷焦平面器件芯片工艺研究[J].应用光学,1999(02):10-17.
[13] Porter S G .[J].SPIE,1995,2552:573-582.
[14] watton R .[J].Ferroelectrics,1996,184:141-150.
[15] Ziebert;Sternberg C;Schmitt A et al.[J].Integrated Ferroelectrics,2000(31):499/183-509/193.
[16] Mike A;Manning T A;Donohue P P .[J].SPIE,2000,4130:128-139.
[17] Liu D H;Ma L Q;David A .[J].Physical Review,1993,17:319-322.
[18] Takeishi T;Whatmore R W .[J].Ferroelectrics,1999,228:53-60.
[19] Liu D H;Payne D A .[J].Journal of Applied Physics,1995,77(07):3361-3364.
[20] Patel A.;Shorrocks N.M. .Preparation and properties of PbTiO/sub 3/ and Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ thin films by sol-gel processing[J].IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control,1991(6):672-676.
[21] Liu D H;Chen H .[J].Materials Letters,1996,28:17-20.
[22] Crosbie MJ.;Wright PJ.;Williams DJ.;Jones AC.;Leedham TJ. Reeves CL.;Jones J.;Lane PA. .Liquid injection metal organic chemical vapour deposition of lead-scandium-tantalate thin films for infrared devices[J].Journal of Crystal Growth,2000(4):390-396.
[23] Jones A C;Davies H O;Leedham T J et al.[J].Integrated Ferroelectrics,2000,30:19-26.
[24] Huang Z.;Watton R.;Whatmore RW.;Todd MA. .Sputtered lead scandium tantalate thin films: a microstructural study[J].Journal of Materials Science,1998(2):363-370.
[25] Huang Z;Donohue P P;Todd M A .[J].Journal of Physics D:Applied Physics,2001,34:3121-3129.
[26] Whatmore RW.;Todd M.;Huang Z. .SPUTTERED LEAD SCANDIUM TANTALATE THIN FILMS - PB4+ IN B SITES IN THE PEROVSKITE STRUCTURE[J].Journal of Applied Physics,1997(11):5686-5694.
[27] Lin C H;Lee S W;CHEN H .[J].Applied Physics Letters,1999,75(16):2485-2487.
[28] Teowee G;McCarthy K .[J].SPIE,1996,2746:38-50.
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