催化学报 , 2008, 29(3): 303-312.
柴油机尾气净化催化剂的最新研究进展
赵震 1, , 张桂臻 {"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"研究了基于PMMA波导的乐甫波传感器,研究了器件的插损以及质量灵敏度随波导层厚度变化的关系.采用低浓度、低粘度的前驱溶液,多步旋涂工艺制备了PMMA波导薄膜,降低了器件的插损,实现了2.18/μm的\"有效厚度\",器件的质量灵敏度达705cm2/g,与前人相比提高了1倍.","authors":[{"authorName":"胡佳","id":"b068313b-fdd0-461e-bc71-d85e37073ca3","originalAuthorName":"胡佳"},{"authorName":"杜晓松","id":"1d6fbe47-95a1-472c-ab1c-b1c578fa04d5","originalAuthorName":"杜晓松"},{"authorName":"杨邦朝","id":"a91d6106-3ce7-4939-948d-ceb97d539bc6","originalAuthorName":"杨邦朝"},{"authorName":"谢光忠","id":"2d434e1e-ad27-499d-9ed6-6f5614a0ce47","originalAuthorName":"谢光忠"},{"authorName":"应智花","id":"32193846-3d4a-4541-a722-2f8e06f6f9a4","originalAuthorName":"应智花"},{"authorName":"蒋亚东","id":"5f91bde7-ba9a-4fe9-a54f-74b085c2adff","originalAuthorName":"蒋亚东"},{"authorName":"王涛","id":"360503c7-2a28-4be7-a7c7-baa10484e981","originalAuthorName":"王涛"},{"authorName":"袁凯","id":"e31aa33e-4f2f-451a-ad2d-1083c8048d39","originalAuthorName":"袁凯"}],"doi":"","fpage":"427","id":"aa469f64-5e8c-43c0-80bb-d8523d9989d9","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"1216881b-26b1-4ca4-ad2e-c9f91a073067","keyword":"乐甫波传感器","originalKeyword":"乐甫波传感器"},{"id":"d5744f96-c391-4774-98a2-4bfa059e1811","keyword":"PMMA波导","originalKeyword":"PMMA波导"},{"id":"877bf171-ec29-4fe8-9967-e06ae572996c","keyword":"插损","originalKeyword":"插损"},{"id":"16ed0462-8939-464c-8a18-3f220fb63bc7","keyword":"质量灵敏度","originalKeyword":"质量灵敏度"}],"language":"zh","publisherId":"gncl200903024","title":"有机波导制备工艺对乐甫波传感器性能的影响","volume":"40","year":"2009"},{"abstractinfo":"以苯酚、溴丙烯、无水碳酸钾为起始原料通过O-烷化、Claisen重排制得邻烯丙基苯酚,使其和含氢硅油通过硅氢加成制得有机磷敏感材料聚甲基[3-(2-羟基)苯基]丙基硅氧烷(PMPS).将PMPS涂覆在石英晶体微天平(QCM)上,研究了其对神经性毒剂模拟剂甲基膦酸二甲酯(DMMP)和其它干扰气体的响应特性.结果表明在(5～70)×10-6范围内,传感器对DMMP的响应呈线性关系,灵敏度为12.4×106Hz.当测试蒸汽为饱和浓度时,传感器对DMMP的响应比其它干扰气体高6倍以上,表现出良好的选择性.","authors":[{"authorName":"刘忠祥","id":"b505294f-a268-42b0-90be-d96d2da111dc","originalAuthorName":"刘忠祥"},{"authorName":"杜晓松","id":"c7e7affc-3b51-401e-a7f5-f5ed0fd20ca2","originalAuthorName":"杜晓松"},{"authorName":"蒋亚东","id":"13948cbb-1894-4edc-8b2b-285b11eb61cc","originalAuthorName":"蒋亚东"},{"authorName":"胡佳","id":"2edc738c-2d4c-4be9-95a9-f92ce7842ce7","originalAuthorName":"胡佳"},{"authorName":"谢光忠","id":"a690635b-77a4-4eb9-a2c0-aa979023dcdb","originalAuthorName":"谢光忠"},{"authorName":"应智花","id":"d34f16eb-60a4-4e43-9da7-78ba9f99617d","originalAuthorName":"应智花"},{"authorName":"何为","id":"945b0478-527d-46cc-9175-f7841ac3b5f3","originalAuthorName":"何为"}],"doi":"","fpage":"279","id":"31e21841-0cfb-4eb0-9e72-cf93953b5053","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"7a94d39d-dc14-40c5-9f7d-033f3ea5c830","keyword":"聚甲基[3-(2-羟基)苯基]丙基硅氧烷","originalKeyword":"聚甲基[3-(2-羟基)苯基]丙基硅氧烷"},{"id":"2bbe1bff-4bbc-4fc0-a7c2-b192adae5096","keyword":"甲基膦酸二甲酯","originalKeyword":"甲基膦酸二甲酯"},{"id":"5d578ae7-be52-410b-893d-c060b72eb437","keyword":"石英晶体微天平","originalKeyword":"石英晶体微天平"},{"id":"eca0f1d6-9c05-4512-a22c-cc58f7f648d6","keyword":"选择性","originalKeyword":"选择性"}],"language":"zh","publisherId":"gncl200802030","title":"新型有机磷毒剂敏感材料的制备及气敏特性研究","volume":"39","year":"2008"},{"abstractinfo":"研究了以导电聚合物PEDOT作为阴极材料的高频低ESR有机片式固体钽电解电容器的被膜技术,重点讨论不同的聚合温度、掺杂浓度和驱溶温度对降低片式固体钽电解电容器ESR的影响.研究结果表明当聚合温度为0～10℃、掺杂浓度为3%(W),驱溶温度80℃时,将得到致密的主链掺杂有效的PE-DOT膜层,从而得到较低的ESR,并表现出比MnO2片式钽电容器具有更好的频率特性.","authors":[{"authorName":"杨文耀","id":"c3b23705-2720-4ee9-81ac-88e8206e073e","originalAuthorName":"杨文耀"},{"authorName":"马腾双","id":"dddda8b6-7d1b-40df-a44f-e596f8fb2f6e","originalAuthorName":"马腾双"},{"authorName":"李璐","id":"13e5b05c-547f-4b3d-9924-89f3380232a6","originalAuthorName":"李璐"},{"authorName":"徐建华","id":"e44f9a8e-13f5-4307-91ce-921e18ab003a","originalAuthorName":"徐建华"},{"authorName":"杨亚杰","id":"76922988-0983-4b6c-9d42-ff0305493c9b","originalAuthorName":"杨亚杰"},{"authorName":"蒋亚东","id":"f650e43e-66c2-413c-988d-7f20a161a488","originalAuthorName":"蒋亚东"},{"authorName":"毛云武","id":"2615ce7b-ece0-4281-ac2f-4e5b18abeb0b","originalAuthorName":"毛云武"}],"doi":"","fpage":"479","id":"617c74b7-c334-4b4c-bb47-650c9391eea8","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"69cbce4b-2cc0-4c1d-a14a-d819a371d996","keyword":"PEDOT","originalKeyword":"PEDOT"},{"id":"1d7a407a-7ad8-49a7-ac3d-0f6a58905bad","keyword":"ESR","originalKeyword":"ESR"},{"id":"45ac4521-2b6b-4df6-8356-6a39ce6977ea","keyword":"聚合温度","originalKeyword":"聚合温度"},{"id":"bc05d2c8-8867-4033-a4f9-b2bf9d79785f","keyword":"掺杂剂浓度","originalKeyword":"掺杂剂浓度"},{"id":"b90fd494-c040-4b4f-9cd4-e4d95a8ecd0e","keyword":"驱溶温度","originalKeyword":"驱溶温度"},{"id":"c29c3803-9349-4393-88df-0d6c055c941a","keyword":"频率特性","originalKeyword":"频率特性"}],"language":"zh","publisherId":"gncl201103026","title":"聚合物阴极钽电解电容器被膜技术研究","volume":"42","year":"2011"},{"abstractinfo":"采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃～400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.","authors":[{"authorName":"王军","id":"065b088b-306e-432a-9b88-bed0e4fc6b86","originalAuthorName":"王军"},{"authorName":"成建波","id":"b38a7f68-bf37-4419-b1c3-8dd2dac416fa","originalAuthorName":"成建波"},{"authorName":"陈文彬","id":"3eecb2d1-5068-4bd5-912a-2e3b6fa5a0a3","originalAuthorName":"陈文彬"},{"authorName":"杨刚","id":"07e9e1ff-5bba-48fc-899f-c110d5385825","originalAuthorName":"杨刚"},{"authorName":"蒋亚东","id":"d2d2ba66-a243-455b-8ede-957653f84c8e","originalAuthorName":"蒋亚东"},{"authorName":"蒋泉","id":"47cb3072-de3a-4e3a-b457-157b29d7a69a","originalAuthorName":"蒋泉"},{"authorName":"杨健君","id":"8880363a-7d86-407c-86e7-5a45882e5b14","originalAuthorName":"杨健君"}],"doi":"10.3969/j.issn.1005-0299.2008.02.029","fpage":"264","id":"95021558-1111-4b40-8c6a-3a1a21948e4a","issue":"2","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"d0b62bb6-d811-4062-9e45-5c311e20ac7b","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"2c2c3a2b-27be-412d-9f05-45add2362350","keyword":"氧化铟锡(ITO)","originalKeyword":"氧化铟锡(ITO)"},{"id":"5592797e-daf4-4268-ad84-6b9784370b1c","keyword":"退火","originalKeyword":"退火"},{"id":"f91e7bc1-3102-47ec-b72c-075004b614b9","keyword":"直流磁控溅射","originalKeyword":"直流磁控溅射"},{"id":"83b18ee1-01f3-4f40-80f5-be52f679bb11","keyword":"方阻","originalKeyword":"方阻"}],"language":"zh","publisherId":"clkxygy200802029","title":"磁控溅射ITO薄膜的退火处理","volume":"16","year":"2008"},{"abstractinfo":"分别对掺杂了新型发色团分子的聚甲基丙烯酸甲酯(PMMA)和纯的PMMA进行了热重分析,得到了2种体系在不同质量损失下的温度并计算了积分程序分解温度(IPDT).结果表明,掺杂后聚合物体系的热稳定性好于纯的PMMA.采用Achar方法和Coats-Redfern方法对2种体系热降解的动力学过程进行了分析,得到了对应的非等温动力学方程.","authors":[{"authorName":"韩莉坤","id":"29c5c560-c528-4bc1-8411-8ef2b6ecb332","originalAuthorName":"韩莉坤"},{"authorName":"蒋亚东","id":"2279ac07-ab4f-43cc-88f4-387ec07151c9","originalAuthorName":"蒋亚东"},{"authorName":"李伟","id":"128ee239-1665-47bd-8b69-03ad6b6dd01e","originalAuthorName":"李伟"},{"authorName":"秦开宇","id":"4b1566c7-3098-4e1f-a78e-5aed1aa8066f","originalAuthorName":"秦开宇"},{"authorName":"刘强","id":"8561104a-25cd-4ffe-9ab0-36bc15d790b7","originalAuthorName":"刘强"}],"doi":"","fpage":"43","id":"0671f67e-8c2f-444a-887f-44239a62e25b","issue":"18","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"6b53a2f9-e329-476b-92b2-8d7abe0f21a3","keyword":"发色团","originalKeyword":"发色团"},{"id":"46e6d384-61f4-4ac8-b352-8586430ceb0a","keyword":"聚合物","originalKeyword":"聚合物"},{"id":"5aad7568-c98a-4620-af3e-c9bc255f9b7b","keyword":"热重分析","originalKeyword":"热重分析"},{"id":"736407ca-3d7e-4491-8a99-40dfd1e5cd37","keyword":"热降解","originalKeyword":"热降解"}],"language":"zh","publisherId":"cldb200918013","title":"含新型发色团的非线性光学聚合物体系的热性能研究","volume":"23","year":"2009"},{"abstractinfo":"在衬底上溅射沉积一层金属钒膜,然后对其退火制备氧化钒薄膜.研究了原位退火热处理和后续退火热处理对氧化钒薄膜成分及其热敏性能的影响.XPS分析表明,原位380 ℃退火处理得到的氧化钒薄膜中4价态和5价态钒的比例为1.097:1,经后续退火处理后,该比例变为0.53:1;同时,原位退火处理得到的氧化钒薄膜的V/O比为1:2.24,经后续退火处理变为1:2.33.AFM分析后显示,经后续退火处理的薄膜晶粒尺寸有所增大.测试了薄膜方阻随温度的变化,结果显示,生成的薄膜具有明显的金属-半导体相变;原位退火热处理后的薄膜方阻(R)为5.46 kΩ/□(25 ℃),方阻温度系数(TRC)为-1.5%/℃(25 ℃);后续退火热处理后,薄膜方阻增大到231 kΩ/□(25 ℃),方阻温度系数升高为-2.74%/℃(25 ℃).此外,就氧化钒薄膜的成分、热敏性能与退火处理之间的关系进行了讨论.","authors":[{"authorName":"魏雄邦","id":"4bfc452e-0e0a-452f-a5af-26655f620d90","originalAuthorName":"魏雄邦"},{"authorName":"蒋亚东","id":"20d0cb43-d4f9-4c79-81c6-f123ea92aafe","originalAuthorName":"蒋亚东"},{"authorName":"吴志明","id":"64d58dce-30d4-41d8-8dd5-b34f3890d3f2","originalAuthorName":"吴志明"},{"authorName":"廖家轩","id":"0cb87a59-0c4b-448e-bf2a-eb9a876502c4","originalAuthorName":"廖家轩"},{"authorName":"贾宇明","id":"4159fae6-24ca-4b92-a9b5-d93696925ffc","originalAuthorName":"贾宇明"},{"authorName":"田忠","id":"b1661a3c-981d-499d-b521-f662d2adb7b9","originalAuthorName":"田忠"}],"doi":"","fpage":"951","id":"08156106-d51a-4d64-918a-17750afa4c1b","issue":"z2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"06ac8920-30dc-4299-9215-647bbf3f5fbc","keyword":"氧化钒薄膜","originalKeyword":"氧化钒薄膜"},{"id":"29875065-5ead-46f8-a185-60c323111b2f","keyword":"退火","originalKeyword":"退火"},{"id":"eddb0f5d-5109-4e78-9f58-56fc134593f1","keyword":"薄膜成分","originalKeyword":"薄膜成分"},{"id":"becd9227-05bb-4c74-88ec-125be85d1d82","keyword":"热敏性能","originalKeyword":"热敏性能"}],"language":"zh","publisherId":"xyjsclygc2009z2253","title":"退火对氧化钒薄膜成分及热敏性能的影响","volume":"38","year":"2009"},{"abstractinfo":"氢化非晶硅(a-Si:H)是一种重要的光敏感薄膜材料,其稳定性的好坏是决定能否应用于器件的重要因素之一.介绍了a-Si:H薄膜稳定性的研究进展,论述了a-Si:H薄膜的稳定性与Si-Si弱键的关系,分析了先致衰退效应(S-W效应)产生的几种机理,提出了在薄膜制备和后处理过程中消除或减少Si-Si弱键以提高a-Si:H薄膜稳定性的方法.","authors":[{"authorName":"廖乃镘","id":"2961280a-2015-4233-a65f-3ae63a2559a0","originalAuthorName":"廖乃镘"},{"authorName":"李伟","id":"ae989b39-7a85-4fca-9ec1-a485aa1572e8","originalAuthorName":"李伟"},{"authorName":"蒋亚东","id":"9aa989f5-23aa-47ea-a7b6-b5bfcb9cd279","originalAuthorName":"蒋亚东"},{"authorName":"匡跃军","id":"92788e63-8030-4b2d-bd47-bf8ea0708e38","originalAuthorName":"匡跃军"},{"authorName":"李世彬","id":"3b2f026b-459b-4fd5-8ef3-943a9fb043db","originalAuthorName":"李世彬"},{"authorName":"吴志明","id":"3346283e-542c-4833-a28d-f04e5920706c","originalAuthorName":"吴志明"}],"doi":"","fpage":"21","id":"0d91778a-4728-47b6-8062-abb140c5a6b3","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"6831668e-30a7-4363-bd30-3816a3253ad9","keyword":"氢化非晶硅","originalKeyword":"氢化非晶硅"},{"id":"bfc5d868-9405-4c94-8e63-6384e741bd63","keyword":"稳定性","originalKeyword":"稳定性"},{"id":"80395e11-b198-4638-b89a-c5a3cce5ea98","keyword":"光致衰退效应","originalKeyword":"光致衰退效应"},{"id":"3213ad3d-ff3f-4579-9023-6f6237384c7b","keyword":"物理模型","originalKeyword":"物理模型"},{"id":"6c0612fb-8133-4b44-bb22-5b9d46d1e5ea","keyword":"稳定化处理","originalKeyword":"稳定化处理"}],"language":"zh","publisherId":"cldb200705006","title":"氢化非晶硅(a-Si:H)薄膜稳定性的研究进展","volume":"21","year":"2007"},{"abstractinfo":"提出了一种有序静电场纺丝技术,用于直接、连续、可控地沉积聚合物纳米纤维。采用内径为100μm的注射器针尖作为喷丝头,聚合物溶液的供应方式和钢笔中墨水的供应方式相似。将喷丝头与收集器间的距离减小到几毫米,从而得到稳定的射流,以实现有序的纳米纤维沉积。通过一个X-Y平台来控制收集器在平面内的运动轨迹和运动速度,制备了各种聚氧化乙烯（PEO）纳米纤维图案,例如间距可控的平行和方格纳米纤维图案、字母‘O’和‘N’。采用扫描电子显微镜（SEM）对制备的PEO纳米纤维的形貌进行了观察。PEO纤维的直径为100-500nm,并且可以通过改变静电场纺丝的工艺参数来控制纤维的直径。这种技术使得静电纺丝成为直接写纳米制造技术的一种潜在工具,从而应用于各种纳米器件的制造,如纳米发电机、纳米传感器、纳米执行器和纳米流体器件。","authors":[{"authorName":"蒲娟","id":"92f6a182-42e4-44ff-a663-8510450f78ca","originalAuthorName":"蒲娟"},{"authorName":"蒋亚东","id":"937f666c-62ef-41ff-9e45-bc0d4d518f27","originalAuthorName":"蒋亚东"}],"doi":"","fpage":"846","id":"1e026da1-3c44-4cec-a4ae-8e8ee126f672","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"4c58129e-c097-455e-97f4-7ce1105af44a","keyword":"静电场纺丝","originalKeyword":"静电场纺丝"},{"id":"527d35ba-4ed8-48df-9369-17036e603207","keyword":"聚氧化乙烯(PEO)","originalKeyword":"聚氧化乙烯(PEO)"},{"id":"d60d9278-bb31-46b3-a4ea-83a93905a10b","keyword":"纳米纤维","originalKeyword":"纳米纤维"},{"id":"0000d3ec-13b0-49c0-b9f6-3db6466b4023","keyword":"有序沉积","originalKeyword":"有序沉积"}],"language":"zh","publisherId":"clkxygc201106008","title":"有序静电场纺丝制备纳米纤维图案","volume":"29","year":"2011"},{"abstractinfo":"将新型有机非线性光学分子DCDHF-2-V按一定比例掺入聚甲基丙烯酸甲酯(PMMA)中,采用旋涂方法制备聚合物薄膜.为了得到宏观二阶非线性光学特性,在90 ℃对薄膜进行电晕极化,形成各向异性.对极化前后的薄膜进行紫外/可见光吸收频谱分析和原子力显微镜分析.采用RHF方法在6-31G基组上对DCDHF-2-V/PMMA薄膜体系中的DCDHF-2-V分子和PMMA进行闭壳层Hartree-Fock理论计算,得到它们的一阶超极化率β分别为60.278755×10-30esu和10.902267×10-34esu.","authors":[{"authorName":"蔡渊","id":"5048cbd0-f174-4dfd-9746-23e3f9288b4a","originalAuthorName":"蔡渊"},{"authorName":"蒋亚东","id":"7731c08e-b456-4413-a0e8-758bb97b2d3e","originalAuthorName":"蒋亚东"},{"authorName":"韩莉坤","id":"3d3b3b0b-98ed-4525-98a0-6289052e0e00","originalAuthorName":"韩莉坤"},{"authorName":"李伟","id":"2bf83882-093c-49c4-8710-8ef71317d7fc","originalAuthorName":"李伟"},{"authorName":"廖进昆","id":"ba133ddf-36b8-42b3-81a7-7d5f755dceb7","originalAuthorName":"廖进昆"}],"doi":"","fpage":"101","id":"2ce69c57-5633-4154-9bbd-963d3a2e465d","issue":"1","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"07930225-9bc6-4030-b998-bc7bb5b75f97","keyword":"有机非线性光学","originalKeyword":"有机非线性光学"},{"id":"6827acb2-e27f-4a7a-a7d6-b7ada6c57515","keyword":"电晕极化","originalKeyword":"电晕极化"},{"id":"73b21385-0b0a-4c8c-a4af-bb137816aa56","keyword":"Hartree-Fock","originalKeyword":"Hartree-Fock"},{"id":"70623049-b317-423c-9303-31e57d3d1fb3","keyword":"一阶超极化率","originalKeyword":"一阶超极化率"}],"language":"zh","publisherId":"gfzclkxygc200801027","title":"非线性光学聚合物薄膜DCDHF-2-V/PMMA的特性","volume":"24","year":"2008"},{"abstractinfo":"研究在传统固体钽电解电容器多孔阳极体微孔内表面原位化学聚合制备PEDT导电聚合物薄膜的方法,通过对比所制有机固体钽电解电容器等效串联电阻(ESR)值的变化,讨论了采用化学原位聚合被膜过程中,受限空间里高分子链形成机理以及在受限条件和开放平面条件下被覆的聚合物薄膜导电性能的变化,采用SEM、AFM、X射线能谱对所制样品表面形貌变化以及多孔阳极体内部聚合物薄膜的被覆情况进行了研究.结果表明,在受限的空间里化学聚合反应生成的聚合物薄膜电导率会由于受限能的影响而降低,其影响程度相似于聚合溶液浓度的变化对聚合物薄膜电导率的影响.","authors":[{"authorName":"徐建华","id":"d6a496b7-1631-4457-8571-684d9858b86d","originalAuthorName":"徐建华"},{"authorName":"杨邦朝","id":"59e0310e-670d-41e7-8325-8b59db9f8e24","originalAuthorName":"杨邦朝"},{"authorName":"蒋亚东","id":"d032cce4-75a7-4850-9405-e33d0afd3de1","originalAuthorName":"蒋亚东"},{"authorName":"黄春华","id":"25611004-7c49-42d5-8da0-3b64c96cb1c3","originalAuthorName":"黄春华"}],"doi":"","fpage":"77","id":"347ca1d2-e732-45db-be77-9c73094f2203","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"30cd94ad-beeb-4a79-b974-835732bd959a","keyword":"导电聚合物","originalKeyword":"导电聚合物"},{"id":"279f79a1-148d-4844-a5bd-8d1a489e5553","keyword":"化学原位聚合","originalKeyword":"化学原位聚合"},{"id":"f229e74f-1234-4437-8a84-eeb4639dff49","keyword":"受限能","originalKeyword":"受限能"},{"id":"78ac1a43-8027-4391-ab03-61c28358a4af","keyword":"SEM","originalKeyword":"SEM"}],"language":"zh","publisherId":"gncl200501023","title":"在钽电解电容器多孔阳极体表面化学原位被覆聚乙烯二氧噻吩(PEDT)薄膜研究","volume":"36","year":"2005"}],"totalpage":7,"totalrecord":63}