研究了AlCl3-SiCl4-H2-CO2气相系统不同温度化学气相沉积Al2O3-SiO2系氧化物相组成及显微结构,分析了化学气相沉积过程机理.结果表明,CVD过程不能实现Al-Si化合物的均匀混合,不同温度沉积产物为不同变体Al2O3结合非晶SiO2或其固溶体复合氧化物,1 050℃以下,随沉积温度提高,沉积物颗粒尺寸减小,1 050℃可沉积出晶化较为完全的莫来石结合α-Al2O3,t-Al2O3和非晶SiO2致密涂层.
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