化学气相沉积传质现象的研究与反应器设计、工艺参数的优化

材料导报, 2000, 14(3): 13-15.

化学气相沉积传质现象的研究与反应器设计、工艺参数的优化

赵康 ^1, , 鄢君辉 ^2, , 刘正堂 ^3, , 郑修麟 ^4,

1.西安理工大材料学院,西安,710048

2.西北工业大学材料科学与工程学院,西安,710072

3.西北工业大学材料科学与工程学院,西安,710072

4.西北工业大学材料科学与工程学院,西安,710072

关键词：化学气相沉积 , 传质现象 , 沉积速率

On te Modelling of Transport Phenomen in CVD and Its Use in Reactor Design and Process Optimization

介绍了化学气相沉积(CVD)中的传质现象研究的最新进展,从传质方程的建立到边界条件确定都进行了详细的介绍,并举例说明了数值分析的结果对反应器设计与工艺参数的优化的指导作用.

参考文献

[1]	Jitendra S G;Raymond L T .[J].Journal of Materials Science,1988,23:4331.
[2]	Holstein W L;Fitzjohn J L .[J].Journal of Crystal Growth,1989,94:131.
[3]	Hirschfelder J O;Curtiss C F;Bird R B.Kmetic Theoryof Gases and Liquids[M].Wiley,New York,1967
[4]	Kleijn C R;Hoogendoom C J .[J].Journal of the Electrochemical Society,1989,136:3423.
[5]	Reid R C;Prausnitz J M;Poling B E.The Propernes of Goses and Liqulds[M].MeGraw-Hill New York,1987
[6]	费祥麟.高等流体力学[M].西安:西安交通大学出版社,1989
[7]	高本辉;崔素言.真空物理[M].北京:科学出版社,1983
[8]	Moffat H K;Jensen K F .[J].Journal of the Electrochemical Society,1989,135
[9]	Kleijn C R;Hoogendoom C S .[J].Chemical Engineering Science,1991,46:321.
[10]	Wahl G .[J].Thin Solid Films,1977,4O:13.
[11]	Houtman C;Graves D B;Jensen K F .[J].Journal of the Electrochemical Society,1986,133:96.
[12]	Michaelidis M;Pollard R .[J].Journal of the Electrochemical Society,1984,131:806.
[13]	Coltrin M E;Kee R J;Zvanc G H .[J].Journal of the Electrochemical Society,1989,136:819.
[14]	Ouazzan J;Rosenbcrger F .[J].Journal of Crystal Growth,1990,100:545.
[15]	Vlacia J I;Howell S;Korner H et al.[J].Applied Surface Science,1989,38:370.
[16]	Gokoglu S A;Kuczmarski M;Tsui P et al.[J].Journal of Phys(paris)Colloq c5 Syppl,1989,50(05):5.
[17]	Evans G;Greif R .[J].International Journal of Heat and Mass Transfer,1989,32:895.
[18]	Weber G;Van Opdorp C;Keijser D .[J].Journal of Applied Physics,1990,67:2109.
[19]	Fotiadis P I;Kieda S;Jensen K F .[J].Journal of Crystal Growth,1990,102:441.
[20]	Fottadis P I;Baekhok M;Jersen K F et al.[J].Journal of Crystal Growth,1990,100:577.
[21]	Fotidis D I;Kremer A M;Mckenna D R et al.[J].Journal of Crystal Growth,1987,85:154.
[22]	Rhee S;Seekeley J;Ilegbysi O J .[J].Journal of the Electrochemical Society,1987,134:2552.
[23]	Kleijn C R;Hoogendoom C J;Hasper A J .[J].Electrochemical Society,1991,138:509.

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化学气相沉积传质现象的研究与反应器设计、工艺参数的优化

On te Modelling of Transport Phenomen in CVD and Its Use in Reactor Design and Process Optimization

参考文献