采用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO(ZAO)薄膜,并对所制备的薄膜在纯氩气氛中进行了400℃、1h和2h的退火处理,将前者再于空气中相同温度下退火1h.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究.研究表明,退火处理对ZAO薄膜的晶体、光学和电学性能有影响.原位沉积的薄膜电阻率为2.59Ω·cm,可见光区透过率约70%.400℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力有所减小;薄膜可见光区平均透过率从70%提高到将近80%;薄膜的电阻率变化不明显,从2.59Ω·cm降低到1.37Ω·cm.400℃纯Ar气氛中退火2h后,薄膜的可见光区透过率和电阻率分别为75%和14.7Ω·cm.400℃纯氩气氛中退火1h再经过空气中退火1h后,薄膜的可见光区透过率和电阻率分别为80%左右和0.69Ω·cm.
参考文献
| [1] | Jeong S H;Boo J H .Influence of target-substrate distance on the properties of AZO films grown by RF magnetron sputtering[J].Thin Solid Films,2004,447-448:105. |
| [2] | Seeber W T;Abou-Helala M O et al.Transparent semiconducting ZnO:Al thin films prepared by spray pyrolysis[J].Materials Science in Semiconductor Processing,1999,2:45. |
| [3] | Shan F K;Yu Y S .Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by evcimer laser[J].Thin Solid Films,2003,435:174. |
| [4] | 方泽波,龚恒翔,刘雪芹,徐大印,黄春明,王印月.退火对多晶ZnO薄膜结构与发光特性的影响[J].物理学报,2003(07):1748-1751. |
| [5] | 吕建国,叶志镇,黄靖云,赵炳辉,汪雷.退火处理对ZnO薄膜结晶性能的影响[J].半导体学报,2003(07):729-736. |
| [6] | 吕珺,汪冬梅,陈长奇,吴玉程,郑治祥.退火处理对不同RF功率下制备ZnO薄膜的结晶性能的影响[J].材料热处理学报,2006(03):26-31. |
| [7] | 陈猛,白雪冬,黄荣芳,闻立时.In2O3：Sn和ZnO：Al透明导电薄膜的结构及其导电机制[J].半导体学报,2000(04):394-399. |
| [8] | Park KC.;Kim KH.;Ma DY. .THE PHYSICAL PROPERTIES OF AL-DOPED ZINC OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):201-209. |
| [9] | 王卿璞 .ZnO薄膜的制备及发光特性的研究[D].山东大学,2003. |
| [10] | Gupta V.;Mansingh A. .INFLUENCE OF POSTDEPOSITION ANNEALING ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SPUTTERED ZINC OXIDE FILM[J].Journal of Applied Physics,1996(2):1063-1073. |
| [11] | Lim W T;Lee C H .Highly oriented ZnO thin films deposited on Ru/Si substrates[J].Thin Solid Films,1999,353:12. |
| [12] | Jeong SH.;Kno S.;Jung D.;Lee SB.;Boo JH. .Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their surface characteristics[J].Surface & Coatings Technology,2003(0):187-192. |
| [13] | Ko H;Tai WP;Kim KC;Kim SH;Suh SJ;Kim YS .Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering[J].Journal of Crystal Growth,2005(1/4):352-358. |
| [14] | Kuo SY;Chen WC;Lai FI;Cheng CP;Kuo HC;Wang SC;Hsieh WF .Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films[J].Journal of Crystal Growth,2006(1):78-84. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%