High performance X8R dielectric ceramics were prepared by doping Bi2O3 to BaTiO3-based ceramics. The effect of small amounts (≤1.2 mol%) of Bi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated. The Bi2O3, acting as a sintering additive, can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130°C. The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasing Bi2O3 content. The dielectric constant increased with increasing Bi2O3 until it reached the maximum value with 0.8 mol% Bi2O3 additive, and the dielectric loss decreased with increasing Bi2O3 content. Optimal dielectric properties of ε=2470, tanδ=0.011 and Δε/ε25≤±9% (-55-150°C) were obtained for the BaTiO3-based ceramics doped with 0.8 mol% Bi2O3 sintered at 1130°C for 6 h.
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