超大规模集成电路硅片的内吸杂

材料导报, 2003, 17(5): 73-81.

超大规模集成电路硅片的内吸杂

汤艳 ^1, , 杨德仁 ^2, , 马向阳 ^3, , 李东升 ^4, , 樊瑞新 ^5, , 阙端麟 ^6,

1.浙江大学硅材料科学国家重点实验室,杭州,310027

2.浙江大学硅材料科学国家重点实验室,杭州,310027

3.浙江大学硅材料科学国家重点实验室,杭州,310027

4.浙江大学硅材料科学国家重点实验室,杭州,310027

5.浙江大学硅材料科学国家重点实验室,杭州,310027

6.浙江大学硅材料科学国家重点实验室,杭州,310027

关键词：硅 , 内吸杂 , 金属 , 氧

Internal Gettering of Silicon Wafers for VLSI

介绍了吸杂的分类与效果以及内吸杂工艺,并综述了金属在硅中的性质,主要阐明了氧在内吸杂中的作用,简述了氮对吸杂的影响,并讨论了内吸杂的物理机理.最后探讨了今后吸杂的发展方向.

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超大规模集成电路硅片的内吸杂

Internal Gettering of Silicon Wafers for VLSI

参考文献