提出了一种新型的制备碳纳米管场发射阴极的方法———植布法,详细描述了植布法工艺,并用扫描电镜观察植布法得到的样品的表面形态,讨论了球磨工艺、碳管和聚合物分散剂不同质量配比,及聚合物介质刻蚀时间的长短对最终场发射阴极性能的影响。实验表明植布法制备的场发射阴极具有良好的场发射性能,如低的开启电压（约为1.7V/μm）,高的电流密度（在3.6V/μm下,电流密度可以达到26mA/cm2）。该方法结合了传统直接生长和丝网印刷法制备碳纳米管阴极的优点,实现了碳纳米管与金属基底可靠结合的结构,广泛适用于以该结构作为核心功能单元的器件。
This paper we proposed a novel technology of CNT field emitters fabrication-planting technology.The morphologies of CNT field emission cathode fabricated using this method were observed by field emission scanning electron microscopy（FESEM）.The effects of ball milling time,etch time,weight ratio between CNTs and polymer media on the field emission property were investigated.The results showed that cathodes fabricated by planting technology have good field emission properties,such as low turn-on field（1.7V/μm） and high current density（26mA/cm2 at an applied electric field of 3.6V/μm）.Planting technology combined the advantages of direct growth and screen printing.Structures with high cohesiveness between CNTs and metal substrate have been obtained,and this structures as core module have a high potential to be applied to emission devices.
参考文献
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